BAV74

SWITCHING DIODE Marking: JA Maximum Ratings @TA=25℃ Parameter Symbol Value Unit Non-Repetitive Peak reverse voltage VRM VR 50 V DC Blocking Voltage Average Rectified Output Current IO 200 mA Power Dissipation PD 225 mW RθJA 556 ℃/W TJ 150 ℃ TSTG -55-150 ℃ Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test V(BR) R IR= 5µA Reverse voltage leakage current IR VR=50V Forward VF Capacitance CD Reveres recovery time trr Reverse breakdown voltage Diode voltage conditions MIN MAX 50 UNIT V 0.1 µA IF=100mA 1 V VR=0, f=1MHz 2 pF 4 nS IF=IR=10mA, RL=100Ω, Irr=0.1×IR 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.