MMBD4148W

Plastic-Encapsulate Diode SWITCHING DIODE 3 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: 1 2 A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW RθJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 Thermal Resistance Junction to Ambient ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min V (BR) 75 Typ Max Unit Conditions V IR=10μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns IF=IR=10mA Irr=0.1XIR,RL=100Ω 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Forward Reverse Characteristics Characteristics 1000 300 Pulsed Pulsed 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta=100℃ 100 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1.6 0 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 250 1.4 (mW) 200 PD 1.3 150 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 1.2 1.1 100 50 0 1.0 0 5 10 REVERSE VOLTAGE 15 VR 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 100 Ta 125 (℃) 150 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.