MMBD4448HSDW

Plastic-Encapsulate Diodes Switching Diode SOT-363 FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance Power Dissipation MMBD4448HA4W MMBD4448HADW MMBD4448HCDW MMBD4448HSDW MARKING:KA5 MARKING:KA6 MARKING:KA7 + - - - + + KA6 KA7 - - + + + - KA5 MARKING:KAB MMBD4448HTW MARKING: KAA - - - - + KAB KAA + - + + + Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW Thermal Resistance from Junction to Ambient RθJA 625 ℃ /W Storage Temperature TSTG -55 ~+150 ℃ 1 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. ELECTRICAL CHARACTERISTICS Electrical Ratings @Ta=25℃ Parameter Symbol Min V (BR) 80 VF1 0.62 Typ Max Unit Conditions V IR=100μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 100 nA VR=70V IR2 25 nA VR=20V Capacitance Between Terminals CT 3.5 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Breakdown Voltage Forward Voltage Reverse Current IF=IR=10mA Irr=0.1XIR,RL=100Ω 2 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics 100 1000 (nA) 10000 REVERSE CURRENT IR T= a 2 5℃ T= a 1 00 ℃ FORWARD CURRENT IF (mA) Forward Characteristics 500 10 1 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE 1.2 1.4 Ta=25℃ 10 20 0 VF (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.1 Ta=100℃ 100 1 1.6 Reverse Characteristics 250 Ta=25℃ 200 PD (mW) 1.0 0.9 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 0.8 0.7 0.6 0 4 8 12 REVERSE VOLTAGE 16 VR 150 100 50 0 20 (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 3 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 125 150 SOT-363-Package Outline Dimensions 4 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.