MMBD7000

Silicon Epitaxial Planar Switching Diode Features 3 • Fast switching speed • High Conductance 1 2 Marking Code: A7 SOT-23 Plastic Package Applications • For general purpose switching Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit VRRM 100 V Reverse Voltage VR 100 V Forward Current IF 200 mA IFSM A Pd 1 2 350 Tj, Tstg - 65 to + 150 Repetitive Peak Reverse Voltage Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Power Dissipation Junction and Storage Temperature Range mW C O Characteristics at Ta = 25 C O Parameter Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Max. Unit V(BR)R 100 - V 0.55 0.67 0.75 - 0.7 0.82 1.1 1.25 Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA VF Reverse Current at VR = 50 V at VR = 100 V at VR = 50 V, Tj = 125 OC IR - 1 3 100 Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω trr - 4 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V µA 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.