BC2301

Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: 2301 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W R θJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) Unit V A ℃ 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 V -1 Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.090 0.112 VGS =-2.5V, ID =-2.0A 0.110 0.142 VDS =-5V, ID =-2.8A 6.5 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time 405 VDS =-10V,VGS =0V,f =1MHz 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A tr Turn-off delay time td(off) Fall time 5.5 10 3.3 6 nC 0.7 1.3 f =1MHz td(on) Rise time pF 75 VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω tf Ω 6.0 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V BC2301 Typical Characteristics Output Characteristics Transfer Characteristics -14 -10 Ta=25℃ VGS= -4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Pulsed Pulsed VGS=-2.0V -12 -8 (A) -6 VGS=-1.5V -4 ID -8 -6 DRAIN CURRENT DRAIN CURRENT ID (A) -10 -4 -2 -2 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS -0 -0.0 -4 (V) -1.0 ID —— -1.5 GATE TO SOURCE VOLTAGE RDS(ON) —— -2.0 VGS -2.5 (V) VGS 250 150 Ta=25℃ Ta=25℃ Pulsed Pulsed 200 (mΩ) 60 RDS(ON) VGS=-2.5V 90 ON-RESISTANCE RDS(ON) (mΩ) 120 ON-RESISTANCE -0.5 VGS=-4.5V 30 150 100 ID=-3.6A 50 0 0 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -0 -10 (A) -2 -4 GATE TO SOURCE VOLTAGE -6 VGS (V) VSD -1 Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -0.3 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD -1.2 (V) 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. -8 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.