MMBD4448V

SOT-563 Plastic-Encapsulate Diodes MMBD4448V SWITCHING DIODE SOT-563 FEATURES  Fast switching speed  High conductance MARKING: KAL KAL KAL=Device code Solid point=Pin1 positioning point 6 5 4 1 2 3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 150 mW RθJA 833 ℃/W Tj,TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Operation Junction and Storage Temperature Range Electrical Ratings @Ta=25℃ Parameter Unit Conditions V IR=2.5 μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 0.1 μA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF Reverse recovery time trr 4 ns Reverse breakdown voltage Forward voltage Reverse current Symbol Min V (BR) 80 VF1 0.62 Typ 1 Max VR=6V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω Typical Characteristics 100 1000 REVERSE CURRENT IR(nA) 10000 FORWARD CURRENT IF (mA) Forward Characteristics 500 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ta=100℃ 100 Ta=25℃ 10 1 1.6 Reverse Characteristics 0 20 FORWARD VOLTAGE V (V) F 60 80 100 Power Derating Curve Capacitance Characteristics 1.1 40 REVERSE VOLTAGE V (V) R 200 Ta=25℃ f=1MHz POWER DISSIPATION PD(mW) 0.9 C T (pF) CAPACITANCE BETWEEN TERMINALS 1.0 0.8 0.7 0.6 0 4 8 12 16 150 100 50 0 20 REVERSE VOLTAGE V (V) R 0 25 50 75 100 AMBIENT TEMPERATURE T (℃) a 2 125 150 SOT-563 Package Outline Dimensions 3