BC857DW

Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Two transistors in one package z z Reduces number of components and board space No mutual interference between the transistors z MARKING: 3C MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.3 W RθJA Thermal Resistance from Junction to Ambient 417 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ stg ℃/W ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO Ic=-10µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 DC current gain hFE VCE=-5V,IC=-2mA -15 125 nA 630 VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.3 V VCE(sat)(2) IC=-100mA,IB=-5mA -0.65 V -0.75 V -0.82 V Collector-emitter saturation voltage VBE(1) VCE=-5V,IC=-2mA VBE(2) VCE=-5V,IC=-10mA -0.6 Base-emitter voltage Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=-5V,IC=-10mA,f=100MHz 200 MHz VCB=-10V,IE=0,f=1MHz 3.5 pF 2.5 dB VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics hFE Static Characteristic COMMON EMITTER Ta=25℃ Ta=100℃ -27uA -6 hFE (mA) -30uA -24uA IC -21uA DC CURRENT GAIN COLLECTOR CURRENT —— IC 1000 -8 -18uA -4 -15uA -12uA -9uA -2 Ta=25℃ 100 -6uA COMMON EMITTER VCE= -5V IB=-3uA 10 -0.1 -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE -8 -10 COLLECTOR CURRENT IC VBEsat -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 (V) —— IC -100 (mA) IC -2 -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 -0.01 -0.1 -1 -10 COLLECTOR CURRENT IC IC -0.1 -0.1 -100 (mA) —— VBE fT IC -100 (mA) IC —— (MHz) 500 (mA) fT Ta=100℃ -10 TRANSITION FREQUENCY IC -10 COLLECTOR CURRENT -100 COLLECTOR CURRENT -1 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC —— IC -100 (mA) Ta 400 30 f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) Cib 10 C (pF) Ta=25 ℃ CAPACITANCE Cob 1 -0.1 300 200 100 0 -1 REVERSE VOLTAGE -10 VR -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.