BC856BW

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications SOT-323 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter 2. EMITTER Unit 3. COLLECTOR Collector-Base Voltage VCBO BC856W -80 BC857W -50 BC858W -30 V Collector-Emitter Voltage VCEO VEBO IC BC856W -65 BC857W -45 BC858W -30 Emitter-Base Voltage V -5 V Collector Current –Continuous -0.1 A PC* Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC856AW= 3A; BC856BW= 3B; BC857AW=3E; BC857BW=3F;BC857CW=3G; BC858AW=3J; BC858BW=3K; BC858CW=3L 1 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage BC856W BC857W Collector-emitter breakdown voltage T est conditions VCBO IC= -10μA, IE=0 Unit BC856W -65 VCEO IC= -10mA, IB=0 BC858W V -50 BC858W -45 V -30 Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 Collector cut-off current ICBO VCB= -30 V , IE=0 BC856AW, 857AW,858AW BC856BW, 857BW,858BW Max -80 -30 BC857W DC current gain Min hFE VCE= -5V, IC= -2mA BC857CW,BC858CW -5 V -15 125 250 220 475 420 800 nA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob VCE= -5V, IC= -10mA f=100MHz 100 VCB=-10V, f=1MHz 2 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. MHz 4.5 pF Static Characteristic (mA) -20uA DC CURRENT GAIN IC -16uA -14uA -4 COLLECTOR CURRENT VCE=-5V COMMON EMITTER Ta=25℃ -18uA -5 -12uA -3 hFE —— IC 500 hFE -6 -10uA -8uA -2 400 Ta=100℃ 300 Ta=25℃ 200 -6uA -4uA -1 100 IB=-2uA -0 0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE -1 -10 (V) IC VBEsat —— -1000 VCE -10 -100 COLLECTOR CURRENT IC VCEsat —— IC -1000 (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) β=20 -800 Ta=25℃ -600 Ta=100℃ -400 -200 Ta=100℃ -100 Ta=25℃ β=20 -0 -0.1 -1 -10 COLLECTOR CURRENT 15 Cob / Cib —— IC VCB / VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) PC 180 Ta=25℃ Cib C CAPACITANCE -10 COLLECTOR CURRENT 12 9 Cob 3 0 -0.1 -1 (mA) f=1MHz IE=0/IC=0 6 -10 -0.1 -100 —— IC -100 (mA) Ta 150 120 90 60 30 0 -1 REVERSE BIAS VOLTAGE 0 -10 V (V) 25 50 75 100 AMBIENT TEMPERATURE Ta 3 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 125 (℃ ) 150 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-323 4 of 4 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.