BC846DW

Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (NPN+NPN) FEATURES z Two transistors in one package z Reduces number of components and board space No mutual interference between the transistors z MARKING: 4Ft MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC Collector Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 65 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V ICBO VCB=30V,IE=0 15 nA = IC=0, VEB 5V I EBO 5 µA Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance hFE VCE=5V,IC=2mA VCE(sat)(1) IC=10mA,IB=0.5mA VCE(sat)(2) IC=100mA,IB=5mA VBE(sat) IC=10mA,IB=0.5mA fT Cob VCB=5V,IE=10mA,f=100MHz 110 600 0.1 0.3 0.77 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V V 100 VCB=10V,IE=0,f=1MHz V MHz 1.5 pF Static Characteristic 7 hFE 16uA 5 14uA 12uA 4 10uA 3 8uA 6uA 2 —— IC Ta=100℃ DC CURRENT GAIN (mA) IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 18uA 6 hFE 1000 20uA Ta=25℃ 100 4uA 1 COMMON EMITTER VCE=5V IB=2uA 10 0.1 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 6 IC 10 VBEsat 1000 Ta=100℃ 100 1 COLLECTOR CURRENT (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE Ta=25℃ —— IC 100 (mA) IC 800 Ta=25℃ 600 Ta=100℃ 400 β=20 10 0.1 1 10 COLLECTOR CURRENT IC 100 —— IC β=20 200 0.1 100 1 10 COLLECTOR CURRENT (mA) VBE (mA) —— VCB/ VEB Cob/ Cib 100 100 IC f=1MHz IE=0/IC=0 (pF) CAPACITANCE T =2 5℃ a 1 0.1 200 COMMON EMITTER VCE=5V 400 600 800 BASE-EMMITER VOLTAGE fT 1000 —— Cib 10 C 10 T =1 00℃ a COLLCETOR CURRENT IC (mA) Ta=25℃ VBE Cob 1 0.1 0.1 1000 1 10 REVERSE VOLTAGE (mV) IC PC 250 —— V 20 (V) Ta VCE=5V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 100 10 1 50 10 COLLECTOR CURRENT IC (mA) 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 150 SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.