BC846PN

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC846W+BC856W) Transistors in one package MAKING: BB MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 65 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 15 nA DC current gain hFE VCE=5V,IC=2mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Noise figure 200 450 VCE(sat) IC=10mA,IB=0.5mA 0.25 V VCE(sat) IC=100mA,IB=5mA 0.6 V VBE(sat) IC=10mA,IB=0.5mA 0.7 V VBE(sat) IC=100mA,IB=5mA 0.9 V VBE(on) VCE=5V,IC=2mA VBE(on) Cob fT NF www.cj-elec.com 0.7 V VCE=5V,IC=10mA 0.72 V VCB=10V,IE=0,f=1MHz 6.0 pF VCE=5V,IC=10mA,f=100MHz 0.58 100 VCE=5V,Ic=0.2mA, f=1kHz,Rg=2KΩ,∆f=200Hz 1 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. MHz 10 dB A,Jun,2014 MAXIMUM RATINGS TR2 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -65 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -65 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -15 nA DC current gain hFE1 VCE=-5V,IC=-2mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance 475 220 VCE(sat) IC=-10mA,IB=-0.5mA -0.3 V VCE(sat) IC=-100mA,IB=-5mA -0.65 V VBE(sat) IC=-10mA,IB=-0.5mA VBE(sat) IC=-100mA,IB=-5mA VBE(on) VCE=-5V,IC=-2mA VBE(on) VCE=-5V,IC=-10mA Cob Transition frequency fT Noise figure NF -0.7 -0.6 VCB=-10V,IE=0,f=1MHz VCE=-5V,IC=-10mA,f=100MHz -0.95 V -0.75 V -0.82 V 4.5 pF MHz 100 VCE=-5V,Ic=-0.2mA, f=1kHz,Rg=2KΩ, ∆f=200Hz 2 of 5 Copyright © All right reserved: V Heyuan China Base Electronics Technology Co., Ltd. 10 dB Typical Characteristics Static Characteristic 10 (mA) BC846PN/TR1 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 1 7 VCEsat IC 100 (mA) IC β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 500 β=20 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 10 COLLECTOR CURRENT VCE (V) 1 10 COLLECTOR CURREMT IC —— 100 IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT —— 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 200 400 600 10 0.25 800 2 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25 ℃ Cib Cob 1 0.1 www.cj-elec.com 0.1 8 IC 10 12 125 150 (mA) PC —— Ta 200 f=1MHz IE=0/IC=0 10 6 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 100 4 150 100 50 0 1 REVERSE VOLTAGE 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 100 Ta (℃ ) 3 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics BC846PN/TR2 Static Characteristic (mA) -3.5 -10uA -9.0uA IC -3.0 COLLECTOR CURRENT DC CURRENT GAIN -7.0uA -6.0uA -2.0 -5.0uA -1.5 —— IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 hFE 600 COMMON EMITTER Ta=25℃ hFE -4.0 -4.0uA 400 Ta=25℃ 200 -3.0uA -1.0 -2.0uA -0.5 IB=-1.0uA -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— VCE 0 -0.1 -12 -1 -10 COLLECTOR CURRENT (V) IC VBEsat —— -1000 -100 IC (mA) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -200 -0.1 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— IC -100 (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ COLLECTOR CURRENT CAPACITANCE C -10 T= a 1 00 ℃ IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V 1 -0.1 -0.1 -0 -300 -600 -900 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 200 100 VCE=-5V -10 V REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) —— -20 (V) Ta 200 150 100 50 o Ta=25 C 0 0 -0 -4 -8 -16 -12 COLLECTOR CURRENT IC www.cj-elec.com Copyright © All right reserved: -20 0 25 50 75 AMBIENT TEMPERATURE (mA) 100 Ta 125 150 (℃ ) 4 of 5 Heyuan China Base Electronics Technology Co., Ltd. A,Jun,2014 SOT-363-Package Outline Dimensions 5 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.