MCR100-8

Plastic-Encapsulate Thyristors Silicon Controlled Rectifier SOT-23 FEATURES Current-IGT : 200 µA 1.KATHODE ITRMS : 0.8 A 2. GATE VRRM/ VDRM : MCR100-6: 400 V 3. ANODE MCR100-8: 600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified） Parameter Symbol Test conditions Min Max Unit On state voltage VTM* ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse VDRM blocking voltage IDRM= 10 µA AND MCR100-6 VRRM MCR100-8 600 Peak forward or reverse blocking IDRM VAK= Rated Current IRRM VDRM or VRRM 10 IHL= 20mA ,VAK = 7 V IH Holding current Gate trigger current V 400 µA 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA B 80 200 µA VAK=7V IGT * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics IGT —— Ta Ta IH (uA) Pulsed IT=20mA、IG=50mA 40 30 20 300 200 100 10 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 0 25 125 50 75 100 AMBIENT TEMPERATURE (℃ ) VGT —— Ta 0.7 6 ON-STATE CURRENT IT (A) 0.6 0.5 0.4 Ta 125 (℃ ) IT —— V TM 7 Pulsed VAK=7V GATE TRIGGER VOLTAGE VGT (V) IH —— 400 Pulsed VAK=7V HOLDING CURRENT GATE TRIGGER CURRENT IGT (uA) 50 Pulsed IG=50mA o Ta=100 C Ta=25℃ 5 4 3 2 0.3 1 0.2 25 50 75 AMBIENT TEMPERATURE 100 Ta 0 0.0 125 (℃ ) 0.5 1.0 1.5 ON-STATE VOLTAGE 2.0 VTM 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2.5 (V) 3.0 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.