0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC857B

BC857B

  • 厂商:

    CBI(创基)

  • 封装:

    SOT-23

  • 描述:

    SOT23-3 100mA 100MHz 200mW

  • 数据手册
  • 价格&库存
BC857B 数据手册
BC856…BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit -VCBO -VCBO -VCBO -VCEO -VCEO -VCEO 80 50 30 65 45 30 V V V V V V -VEBO 5 V Collector Current -IC 100 mA Peak Collector Current -ICM 200 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Storage Temperature Range BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 BC858, BC859 DEVICE MARKING BC856A=3A;BC856B=3B;BC856C=3C; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3H; BC858C=3D BC859A=4A;BC859B=4B;BC859C=4C; BC860A=4E;BC860B=4F;BC860C=4G; Page 1 of 4 2/24/2012 C C Characteristics at Ta = 25 C O Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - -ICBO - 15 nA BC856 BC857, BC860 BC858, BC859 -V(BR)CBO -V(BR)CBO -V(BR)CBO 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CES -V(BR)CES -V(BR)CES 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CEO -V(BR)CEO -V(BR)CEO 65 45 30 - V V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.3 0.65 V V -VBE(on) -VBE(on) 0.6 - 0.75 0.82 V V fT 100 - MHz Cob - 6 pF NF - 10 4 4 2 dB Current Gain Group A B C Emitter Base Breakdown Voltage at -IE = 1 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -IC = 2 mA, -VCE = 5 V at -IC = 10 mA, -VCE = 5 V Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure BC856, BC857, BC858 at -IC = 200 µA, -VCE = 5 V, RG = 2 KΩ, f = 1 KHz BC859, BC860 BC859 at -IC = 200 µA, -VCE = 5 V, BC860 RG = 2 KΩ, f = 30 ~15 KHz Page 2 of 4 2/24/2012 Page 3 of 4 2/24/2012 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 4 of 4 SOT-23 2/24/2012
BC857B 价格&库存

很抱歉,暂时无法提供与“BC857B”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BC857B
    •  国内价格
    • 1+0.03450
    • 100+0.03220
    • 300+0.02990
    • 500+0.02760
    • 2000+0.02645
    • 5000+0.02576

    库存:0