PT05D5B

PT05D5B – ESD Protection Diode Feature  400 Watts peak pulse power (8/20s)  Bidirectional configurations  Solid state silicon-avalanche technology  Low clamping voltage  Low leakage current  IEC61000-4-2 (ESD) ±30kV (Air), ±15kV (Contact)  IEC61000-4-4 (EFT) 40A (5/50ns)  IEC61000-4-5 (Lightning): 20A (8/20s) Applications Mechanical Data  Microprocessor based equipment  SOD523 package  Notebooks, Desktops, and Servers  Molding compound flammability rating: UL94 V-0  Portable Instrumentation  Tape and Reel Packaging  Personal Digital Assistant (PDA)  RoHS/WEEE Compliant  Pagers Peripherals Schematic and PIN Configuration Maximum Rating Parameter Symbol IEC61000-4-2 ESD Voltage – Air Mode VESD(1) IEC61000-4-2 ESD Voltage – Contact Mode Limit ±30 ±15 Unit kV Peak Pulse Power PPP(2) 400 Peak Pulse Current IPP(2) 20 A TL 260 °C Junction Temperature TJ -55~150 °C  Storage Temperature Range Tstg -55~150 °C  Maximum Lead Solder Temperature (10 seconds duration) W Note: 1. 2. 3. Device stressed with ten non-repetitive ESD pulses. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 1 of 4 2017/07/04 Rev: A PT05D5B – ESD Protection Diode Electrical Characteristics Parameter Reverse Stand-off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance Symbol Test Conditions Min Typ V VBR Max 5.0 RWM(1) IT = 1mA 6.0 Unit V V A IR VRWM = 5V 1 VC(2) IPP = 20A 20 V 40 pF VR = 0V, f = 1MHz CJ 35 Note: 1. 2. 3. Other voltages available upon request. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. Electrical Parameters Symbol Parameter VC Clamping Voltage @ IPP IPP Reverse Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Working Peak Reverse Voltage 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 2 of 4 2017/07/04 Rev: A PT05D5B – ESD Protection Diode Typical Characteristics 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 3 of 4 2017/07/04 Rev: A PT05D5B – ESD Protection Diode SOD523 Package Outline Dimensions Symbol Dimensions (mm) Dimensions (inch) Min Max Min Max A 0.500 0.700 0.020 0.028 b 0.250 0.350 0.010 0.014 C 0.070 0.200 0.0028 0.0079 D 1.100 1.300 0.043 0.051 E 0.700 0.900 0.028 0.035 HE 1.500 1.700 0.059 0.067 L 0.150 0.250 0.006 0.010 Marking Packaging Information Order Code Packaging Reel Size PCS/Reel PT05D5B SOD523 7 inch 5,000 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 4 of 4 2017/07/04 Rev: A