PTUC0516N

PTUC0516N – ESD Protection Diode Feature  30 Watts peak pulse power (8/20s)  Tiny DFN3310 package  Protect up to six lines  Solid state silicon-avalanche technology  Low clamping voltage  Low leakage current  Low capacitance (CJ = 0.2 pF typ. I/O to I/O)  IEC61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)  IEC61000-4-4 (EFT) 40A (5/50ns)  IEC61000-4-5 (Lightning): 3A (8/20s) Applications Mechanical Data  USB3.0/3.1, Type C  DFN3310 package  HDMI1.4/2.0, Display Port 1.3  Molding compound flammability rating: UL94 V-0  Unified Display Interface  Tape and Reel Packaging  Digital Video Interface  RoHS/WEEE Compliant Schematic and PIN Configuration Maximum Rating Parameter Symbol IEC61000-4-2 ESD Voltage – Air Mode VESD(1) IEC61000-4-2 ESD Voltage – Contact Mode Limit ±15 ±8 Unit kV Peak Pulse Power PPP(2) 30 Peak Pulse Current IPP(2) 3 A TL 260 °C Junction Temperature TJ -55~125 °C  Storage Temperature Range Tstg -55~125 °C  Maximum Lead Solder Temperature (10 seconds duration) W Note: 1. 2. 3. Device stressed with ten non-repetitive ESD pulses. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 1 of 4 2017/08/16 Rev: A PTUC0516N – ESD Protection Diode Electrical Characteristics Parameter Reverse Stand-off Voltage Symbol Test Conditions IT = 1mA Reverse Leakage Current IR VRWM = 5V Peak Pulse Current IPP Clamping Voltage Junction Capacitance Typ Max 5.0 V 6.0 7.2 9.5 V 0.1 0.5 A V VBR Reverse Breakdown Voltage Min RWM(1) VC(2) IPP = 3A VR = 0V, f = 1MHz, I/O to I/O VR = 0V, f = 1MHz, I/O to GND CJ Unit 3 A 10 V 0.2 0.4 pF pF Note: 1. 2. 3. Other voltages available upon request. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. Electrical Parameters Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM VF Reverse Stand-off Voltage Forward Voltage @ IF 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 2 of 4 2017/08/16 Rev: A PTUC0516N – ESD Protection Diode Typical Characteristics 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 3 of 4 2017/08/16 Rev: A PTUC0516N – ESD Protection Diode DFN3310 Package Outline Dimensions Dimensions (mm) Symbol Min Typ Max A 0.45 0.50 0.55 A1 0.00 0.02 0.05 b 0.15 0.20 0.25 c 0.100 0.152 0.200 D 3.25 3.30 3.35 D2 0.30 0.35 0.40 D3 1.19 BSC e 0.40 BSC Nd 2.80 BSC E 0.95 1.00 1.05 E2 0.45 0.50 0.55 L 0.20 0.25 0.30 L2 0.30 0.35 0.40 h 0.05 0.10 0.15 Marking Packaging Information Order Code Packaging Reel Size PCS/Reel PTUC0516N DFN3310 7 inch 3,000 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 4 of 4 2017/08/16 Rev: A