PTUC0524PA

PTUC0524PA – ESD Protection Diode Feature  30 Watts peak pulse power (8/20s)  Unidirectional configurations  Solid state silicon-avalanche technology  Low clamping voltage  Low leakage current  Low capacitance (CJ = 0.2pF typ. I/O to I/O)  IEC61000-4-2 (ESD) ±15kV (Air), ±12kV (Contact)  IEC61000-4-4 (EFT) 40A (5/50ns)  IEC61000-4-5 (Lightning): 3A (8/20s) Applications Mechanical Data  USB3.0, USB2.0, Ethernet  Tiny DFN10L(2.5mmx1.0mm) package  HDMI 2.0, Displayport 1.3, eSATA  Molding compound flammability rating: UL94V-0  Unified Display Interface  Tape and Reel Packaging  Digital Video Interface  RoHS/WEEE Compliant  High Speed Serial Interface Schematic and PIN Configuration Maximum Rating Parameter Symbol IEC61000-4-2 ESD Voltage – Air Mode VESD(1) IEC61000-4-2 ESD Voltage – Contact Mode Value ±15 ±12 Unit kV Peak Pulse Power ( tp =8/20μs ) PPP 30 Peak Pulse Current ( tp =8/20μs ) (note1) IPP 3 W A Lead Solder Temperature (10 seconds duration) TL 260 °C Junction Temperature TJ -55~125 °C  Storage Temperature Range Tstg -55~125 °C  Note: 1. 2. 3. Device stressed with ten non-repetitive ESD pulses. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 1 of 4 2018/06/28 Rev: C PTUC0524PA – ESD Protection Diode Electrical Characteristics Parameter Reverse Stand-off Voltage Symbol Test Conditions IT = 1mA Reverse Leakage Current IR VRWM = 5V Peak Pulse Current IPP Clamping Voltage Junction Capacitance Typ Max 5.0 V 6.0 7.2 9.5 V 0.02 0.50 A V VBR Reverse Breakdown Voltage Min RWM(1) VC(2) VCL CJ IPP = 3.0A IPP = 16A, tp=TLP VR = 0V, f = 1MHz, I/O to I/O VR = 0V, f = 1MHz, I/O to GND 10 Unit 3 A 11 15 V V pF pF 0.20 0.36 Note: 1. 2. 3. Other voltages available upon request. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. Electrical Parameters Symbol VC Parameter Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM VF Reverse Stand-off Voltage Forward Voltage @ IF 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 2 of 4 2018/06/28 Rev: C PTUC0524PA – ESD Protection Diode Typical Characteristics 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 3 of 4 2018/06/28 Rev: C PTUC0524PA – ESD Protection Diode DFN10L(2.5mmx1.0mm) Package Outline Dimensions Dimensions (mm) Symbol Min Nom Max A 0.45 0.50 0.55 A1 - 0.02 0.05 0.20 A3 0.10 0.15 D 2.45 2.50 2.55 E 0.95 1.00 1.05 D1 0.35 0.40 0.45 b 0.15 0.20 0.25 e 0.5BSC L 0.35 0.40 0.45 Marking Packaging Information Order Code Packaging Reel Size PCS/Reel PTUC0524PA DFN10L(2.5x1.0mm) 7 inch 3,000 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 4 of 4 2018/06/28 Rev: C