RS3GBF

山东晶导微电子有限公司 RS3ABF THRU RS3MBF Jingdao Microelectronics Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 3 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Fast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: R3AB~R3MB Simplified outline SMBF symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols RS3ABF RS3BBF RS3DBF RS3GBF RS3JBF RS3KBF RS3MBF Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Forward Voltage at 3 A VF 1.3 V IR 5 100 μA Cj 40 pF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time t rr （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range 250 150 500 ns RθJA RθJC 45 15 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMBF-F-RS3ABF~RS3MBF-3A1KV Page 1 of 3 山东晶导微电子有限公司 RS3ABF THRU RS3MBF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Maximum Average Forward Current Rating 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 90 75 60 45 30 15 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 RS3ABF THRU RS3MBF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm ∠ 9° Type number Marking code RS3ABF R3AB RS3BBF R3BB RS3DBF R3DB RS3GBF R3GB RS3JBF R3JB RS3KBF R3KB RS3MBF R3MB 1.8(71) 2.54(100) 3.0(118) 40 Marking Unit：mm(mil) 2016.01 g 1.0 The recommended mounting pad size 1.8(71) g pad e E A pad HE JD512268B0 Page 3 of 3