BZT52C12SW

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD BZT52C2V4SW~BZT52C43SW Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.4V to 43V. • Ideally suited for automated assembly processes DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA ▪Case: SOD-323W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz 1 Top View Simplified outline SOD-323W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Value Unit Power Dissipation PD 200 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 625 °C/W T j , T stg -55 ~ +150 °C Typical thermal resistance juncting to ambient Operating and Storage Temperature Range Fig.1 Power Derating Curve Power Dissipation P D ( W ) 250 200 150 100 50 0 25 50 75 100 125 150 T a ,Case Temperature (°C) 2019.08 175 Transient Thermal Impedance（ °C /W） Symbol Parameter Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-323W-W-BZT52C2V4SW~BAT52C43SW-200mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD BZT52C2V4SW~BZT52C43SW Characteristics at Ta = 25°C (NOTE 2) Type Marking (NOTE 3) V ZT（@ I ZT） Min（V） Maximum Reverse Current Maximum Zener Impedance Zener Voltage Range (NOTE 2) Typical Temperature Coefficient @I ZTC mV/℃ Test Current I ZTC I ZT Z ZT（@ I ZT） Z ZK（@ I ZK） I ZK IR VR (Ω) mA μA V MIN MAX mA Nom（V） Max（V） (mA) BZT52C2V4SW WX 2.2 2.4 2.6 5 100 600 1 50 1 -3.5 0 5 BZT52C2V7SW W1 2.5 2.7 2.9 5 100 600 1 20 1 -3.5 0 5 BZT52C3V0SW W2 2.8 3 3.2 5 95 600 1 10 1 -3.5 0 5 BZT52C3V3SW W3 3.1 3.3 3.5 5 95 600 1 5 1 -3.5 0 5 BZT52C3V6SW W4 3.4 3.6 3.8 5 90 600 1 5 1 -3.5 0 5 BZT52C3V9SW W5 3.7 3.9 4.1 5 90 600 1 3 1 -3.5 0 5 BZT52C4V3SW W6 4 4.3 4.6 5 90 600 1 3 1 -3.5 0 5 BZT52C4V7SW W7 4.4 4.7 5 5 80 500 1 3 2 -3.5 0.2 5 BZT52C5V1SW W8 4.8 5.1 5.4 5 60 480 1 2 2 -2.7 1.2 5 BZT52C5V6SW W9 5.2 5.6 6 5 40 400 1 1 2 -2 2.5 5 BZT52C6V2SW WA 5.8 6.2 6.6 5 10 150 1 3 4 0.4 3.7 5 BZT52C6V8SW WB 6.4 6.8 7.2 5 15 80 1 2 4 1.2 4.5 5 BZT52C7V5SW WC 7 7.5 7.9 5 15 80 1 1 5 2.5 5.3 5 BZT52C8V2SW WD 7.7 8.2 8.7 5 15 80 1 0.7 5 3.2 6.2 5 BZT52C9V1SW WE 8.5 9.1 9.6 5 15 100 1 0.5 6 3.8 7 5 BZT52C10SW WF 9.4 10 10.6 5 20 150 1 0.2 7 4.5 8 5 BZT52C11SW WG 10.4 11 11.6 5 20 150 1 0.1 8 5.4 9 5 BZT52C12SW WH 11.4 12 12.7 5 25 150 1 0.1 8 6 10 5 BZT52C13SW WI 12.4 13 14.1 5 30 170 1 0.1 8 7 11 5 BZT52C15SW WJ 13.8 15 15.6 5 30 200 1 0.1 10.5 9.2 13 5 BZT52C16SW WK 15.3 16 17.1 5 40 200 1 0.1 11.2 10.4 14 5 BZT52C18SW WL 16.8 18 19.1 5 45 225 1 0.1 12.6 12.4 16 5 BZT52C20SW WM 18.8 20 21.2 5 55 225 1 0.1 14.4 18 5 20.8 22 23.3 5 55 250 1 0.1 15.4 16.4 20 5 250 14 BZT52C22SW WN BZT52C24SW WO 22.8 24 25.6 5 70 1 0.1 16.8 18.4 22 5 BZT52C27SW WP 25.1 27 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30SW WQ 28 30 32 2 80 300 0.5 0.1 24.4 29.4 2 BZT52C33SW WR 31 33 35 2 80 325 0.5 0.1 23.1 27.4 33.4 2 21 BZT52C36SW WS 34 36 38 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39SW WT 37 39 41 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43SW WU 40 43 46 2 100 700 1 10 12 5 NOTE: 0.1 32 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. 2019.08 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 BZT52C2V4SW~BZT52C43SW Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323W E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323W mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 90829 Page 3 of 3