MM3Z5V1BW

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0BW THRU MM3Z75BW Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 300mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±2% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-323W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz Top View Simplified outline SOD-323W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 300 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 417 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.35 Power Dissipation ( W ) 0.3 0.25 0.2 0.15 0.1 0.05 0.0 25 50 75 100 125 T A , Temperature (°C) 2019.08 150 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-323W-W-MM3Z2V0BW~MM3Z75BW-300mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0BW THRU MM3Z75BW Characteristics at Ta = 25°C Zener Voltage Range （1） I ZT Type Marking V ZT（at I ZT） Min（V） Nom（V） Max（V） (mA) Dynamic Impedance Reverse Current Z ZT（at I ZT） IR at V R Max (Ω) Max（μA） （V） MM3Z2V0BW B0 1.96 2.0 2.04 5 100 120 0.5 MM3Z2V2BW C0 2.16 2.2 2.24 5 100 120 0.7 MM3Z2V4BW 1C 2.35 2.4 2.45 5 100 120 1 MM3Z2V7BW 1D 2.65 2.7 2.75 5 110 120 1 MM3Z3V0BW 1E 2.94 3.0 3.06 5 120 50 1 MM3Z3V3BW 1F 3.23 3.3 3.37 5 130 20 1 MM3Z3V6BW 1H 3.53 3.6 3.67 5 130 10 1 MM3Z3V9BW 1J 3.82 3.9 3.98 5 130 5 1 MM3Z4V3BW 1K 4.21 4.3 4.39 5 130 5 1 MM3Z4V7BW 1M 4.61 4.7 4.79 5 130 2 1 MM3Z5V1BW 1N 5 5.1 5.2 5 130 2 1.5 MM3Z5V6BW 1P 5.49 5.6 5.71 5 80 1 2.5 MM3Z6V2BW 1R 6.08 6.2 6.32 5 50 1 3 MM3Z6V8BW 1X 6.66 6.8 6.94 5 30 0.5 3.5 MM3Z7V5BW 1Y 7.35 7.5 7.65 5 30 0.5 4 MM3Z8V2BW 1Z 8.04 8.2 8.36 5 30 0.5 5 MM3Z9V1BW 2A 8.92 9.1 9.28 5 30 0.5 6 MM3Z10BW 2B 9.8 10 10.2 5 30 0.1 7 MM3Z11BW 2C 10.78 11 11.22 5 30 0.1 8 MM3Z12BW 2D 11.76 12 12.24 5 35 0.1 9 MM3Z13BW 2E 12.74 13 13.26 5 35 0.1 10 MM3Z15BW 2F 14.7 15 15.3 5 40 0.1 11 MM3Z16BW 2H 15.68 16 16.32 5 40 0.1 12 MM3Z18BW 2J 17.64 18 18.36 5 45 0.1 13 MM3Z20BW 2K 19.6 20 20.4 5 50 0.1 15 MM3Z22BW 2M 21.56 22 22.44 5 55 0.1 17 MM3Z24BW 2N 23.52 24 24.48 5 60 0.1 19 MM3Z27BW 2P 26.46 27 27.54 2 70 0.1 21 MM3Z30BW 2R 29.4 30 30.60 2 80 0.1 23 MM3Z33BW 2X 32.34 33 33.66 2 80 0.1 25 0.1 27 MM3Z36BW 2Y 35.28 36 36.72 2 90 MM3Z39BW 2Z 38.22 39 39.78 2 100 0.1 30 MM3Z43BW 3A 42.14 43 43.86 2 130 0.1 33 MM3Z47BW 3B 46.06 47 47.94 2 150 0.1 36 MM3Z51BW 3C 49.98 51 52.02 2 180 0.1 39 MM3Z56BW 3D 54.88 56 57.12 2 200 0.1 43 MM3Z62BW 3E 60.76 62 63.24 2 215 0.1 47 MM3Z68BW 3F 66.64 68 69.36 2 240 0.1 52 MM3Z75BW 3H 73.5 75 76.5 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) 2019.08 Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0BW THRU MM3Z75BW PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323W E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323W mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 Page 3 of 3