MM1Z5V1BW

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0BW THRU MM1Z75BW Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±2% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-123W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz Simplified outline SOD-123W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 500 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 340 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.6 Power Dissipation ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 T A , Temperature (°C) 2019.08 150 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-123W-W-MM1Z2V0BW~MM1Z75BW-500mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0BW THRU MM1Z75BW Characteristics at Ta = 25°C Dynamic Impedance Zener Voltage Range （1） Type Marking V ZT（at I ZT） Min（V） Reverse Current I ZT Z ZT（at I ZT） IR at V R Max（μA） （V） Nom（V） Max（V） (mA) Max (Ω) MM1Z2V0BW 4A 1.96 2 2.04 5 100 120 0.5 MM1Z2V2BW 4B 2.16 2.2 2.24 5 100 120 0.7 MM1Z2V4BW 4C 2.35 2.4 2.45 5 100 120 1 MM1Z2V7BW 4D 2.65 2.7 2.75 5 110 120 1 MM1Z3V0BW 4E 2.94 3 3.06 5 120 50 1 MM1Z3V3BW 4F 3.23 3.3 3.37 5 130 20 1 MM1Z3V6BW 4H 3.53 3.6 3.67 5 130 10 1 MM1Z3V9BW 4J 3.82 3.9 3.98 5 130 5 1 MM1Z4V3BW 4K 4.21 4.3 4.39 5 130 5 1 4.7 4.79 MM1Z4V7BW 4M 4.61 5 130 2 1 MM1Z5V1BW 4N 5 5.1 5.20 5 130 2 1.5 MM1Z5V6BW 4P 5.49 5.6 5.71 5 80 1 2.5 MM1Z6V2BW 4R 6.08 6.2 6.32 5 50 1 3 MM1Z6V8BW 4X 6.66 6.8 6.94 5 30 0.5 3.5 MM1Z7V5BW 4Y 7.35 7.5 7.65 5 30 0.5 4 MM1Z8V2BW 4Z 8.04 8.2 8.36 5 30 0.5 5 MM1Z9V1BW 5A 8.92 9.1 9.28 5 30 0.5 6 MM1Z10BW 5B 9.8 10 10.2 5 30 0.1 7 MM1Z11BW 5C 10.78 11 11.22 5 30 0.1 8 11.76 12 12.24 5 35 0.1 9 0.1 10 0.1 11 MM1Z12BW 5D MM1Z13BW 5E 12.74 13 13.26 5 35 MM1Z15BW 5F 14.7 15 15.3 5 40 MM1Z16BW 5H 15.68 16 16.32 5 40 0.1 12 MM1Z18BW 5J 17.64 18 18.36 5 45 0.1 13 MM1Z20BW 5K 19.6 20 20.4 5 50 0.1 15 MM1Z22BW 5M 21.56 22 22.44 5 55 0.1 17 MM1Z24BW 5N 23.52 24 24.48 5 60 0.1 19 MM1Z27BW 5P 26.46 27 27.54 5 70 0.1 21 MM1Z30BW 5R 29.4 30 30.6 5 80 0.1 23 MM1Z33BW 5X 32.34 33 33.66 5 80 0.1 25 35.28 36 36.72 5 90 0.1 27 2.5 100 MM1Z36BW 5Y MM1Z39BW 5Z 38.22 39 39.78 2 30 MM1Z43BW 6A 42.14 43 43.86 2.5 130 2 33 MM1Z47BW 6B 46.06 47 47.94 2.5 150 2 36 MM1Z51BW 6C 49.98 51 52.02 2.5 180 1 39 MM1Z56BW 6D 54.88 56 57.12 2.5 180 1 43 MM1Z62BW 6E 60.76 62 63.24 2.5 200 0.2 47 MM1Z68BW 6F 66.64 68 69.36 2.5 250 0.2 52 MM1Z75BW 6H 73.5 75 76.5 2.5 300 0.2 57 （1） V ZT is tested with pulses (20 ms) 2019.08 Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0BW THRU MM1Z75BW PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123W A D b E A1 C ∠ALL ROUND L1 E1 SOD-123W mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 Page 3 of 3