BAV56T

Plastic-Encapsulate Diodes SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56T Marking: A1 BAV70T Marking: A4 BAV99T Marking: A7 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Reverse voltage VR 85 V Forward current IO 75 mA Forward power dissipation PD 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test conditions Min Max 85 Unit V(BR) IR= 1μA IR1 VR=75V 2 μA IR2 VR=25V 0.03 μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0 1.5 pF Reverse recovery time t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω 4 ns V Reverse voltage leakage current f=1MHz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Characteristics 100 3000 (nA) 10000 T= a 2 5℃ FORWARD CURRENT 10 REVERSE CURRENT IR T= a 1 00 ℃ 30 IF (mA) Forward 300 3 1 0.3 Reverse Characteristics Ta=100℃ 1000 300 100 30 Ta=25℃ 10 3 0.1 0.0 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 200 1.6 (mW) f=1MHz 150 PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 1.0 0.8 0.6 100 50 0 0 4 8 12 REVERSE VOLTAGE 16 VR 20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 125 Ta (℃) 150 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-523 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.