DTC114EE

MMDTC114EE NPN Silicon Epitaxial Planar Digital Transistor Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process MARKING: 24 Collector (Output) Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit VCEO 50 V Input Voltage VI - 10 to + 40 V Collector Current IC 100 mA Power Dissipation Ptot 150 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Collector Emitter Voltage Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 5 mA hFE 30 - - - Collector Base Cutoff Current at VCB = 50 V ICBO - - 500 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 0.88 mA VCE(sat) - - 0.3 V Input on Voltage at VCE = 0.3 V, IC = 10 mA VI(on) - - 3 V Input off Voltage at VCE = 5 V, IC = 100 µA VI(off) 0.5 - - V Transition frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz fT - 250 - MHz Input Resistance R1 7 10 13 KΩ Resistance Ratio R 2 / R1 0.8 1 1.2 - Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Page 1 of 3 2/21/2014 OUTPUT VOLTAGE: VCE (sat) (V) DC CURRENT GAIN: hFE OUTPUT CURRENT : IC (A) MMDTC114EE Page 2 of 3 2/21/2014 Page 3 of 3 2/21/2014