PTLC0514TS

PTLC0514TS – ESD Protection Diode Feature  100 Watts peak pulse power (8/20s)  SOT23-6 package  Solid state silicon-avalanche technology  Low clamping voltage  Low leakage current  Low capacitance (CJ = 0.5 pF typ.)  Protect one data/power line  IEC61000-4-2 (ESD) ±20kV (Air), ±15kV (Contact)  IEC61000-4-4 (EFT) 40A (5/50ns)  IEC61000-4-5 (Lightning): 6.0A (8/20s) Applications Mechanical Data  Ethernet  SOT23-6 package  Digital Video Interface (DVI)  Molding compound flammability rating: UL94 V-0  USB2.0  Tape and Reel Packaging  Notebooks and PC Computers  RoHS/WEEE Compliant Schematic and PIN Configuration Maximum Rating Parameter Symbol IEC61000-4-2 ESD Voltage – Air Mode VESD(1) IEC61000-4-2 ESD Voltage – Contact Mode Limit ±20 ±15 Unit kV Peak Pulse Power PPP(2) 100 Peak Pulse Current IPP(2) 6.0 A TL 260 °C Junction Temperature TJ -55~125 °C  Storage Temperature Range Tstg -55~125 °C  Maximum Lead Solder Temperature (10 seconds duration) W Note: 1. 2. 3. Device stressed with ten non-repetitive ESD pulses. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 1 of 4 2018/06/20 Rev: B PTLC0514TS – ESD Protection Diode Electrical Characteristics Parameter Reverse Stand-off Voltage Symbol Test Conditions IT = 1mA Reverse Leakage Current IR VRWM = 5V Peak Pulse Current IPP Clamping Voltage Junction Capacitance Typ 5.0 V 6.0 6.8 8.5 V 50 500 nA V VBR Reverse Breakdown Voltage Min RWM(1) VC(2) CJ Max Unit 6.0 A IPP = 6.0A 14 16 V VR = 0V, f = 1MHz, I/O to I/O VR = 0V, f = 1MHz, I/O to GND 0.5 0.6 0.8 pF pF Note: 1. 2. 3. Other voltages available upon request. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. Electrical Parameters Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM VF Reverse Stand-off Voltage Forward Voltage @ IF 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 2 of 4 2018/06/20 Rev: B PTLC0514TS – ESD Protection Diode Typical Characteristics 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 3 of 4 2018/06/20 Rev: B PTLC0514TS – ESD Protection Diode SOT23-6 Package Outline Dimensions Symbol Dimensions (mm) Min Max A 1.050 1.250 A1 0.000 0.100 A2 1.050 1.150 D 2.820 3.020 E 1.500 1.700 E1 2.650 2.950 b 0.300 0.500 e 0.950 (BSC) e1 1.800 2.000 L 0.300 0.600  0° 8° SOT23-6 Recommended Pad Layout Marking Packaging Information Order Code Packaging Reel Size PCS/Reel PTLC0514TS SOT23-6 7 inch 3,000 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 4 of 4 2018/06/20 Rev: B