MMBT3904

MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40Volts POWER 225mWatts FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Ÿ Collector current IC=0.2A. Ÿ Transition frequency f T >300MHz @ Ÿ IC=10mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC Ÿ directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:1AM RANK L H RANGE 100-200 200-300 3 C 1AM 2 1 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD PD RθJA RθJA TJ TSTG T Parameter Vaule Collector-Base Voltage 60 Collector-Emitter Voltage 40 Emitter-Base Voltage 6 Collector Current 0.2 Total Device Dissipation (FR-5 BOARD) 0.225 Total Device Dissipation (Alumina Substrare) 0.3 Thermal Resistance Form Junction to Ambient 625 Thermal Resistance, Junction to Ambient 417 Junction Temperature 150 Storage Temperature -55~+150 Peak Temperature soldering 260 Unit V V V A W W O C/W O C/W O C O C O C E MMBT3904 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Base cut-off current Emitter cut-off current DC current gain* Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX IEBO HFE HFE HFE HFE HFE Collector-Emitter saturation voltage VCE(SAT) Base-Emitter Saturation voltage* VBE(SAT) Input capacitance Output capacitance Transition ferquency Delay time Rise time Storage time Fall time Noise Figure Input Impedancen Voltage Feedback Ratio Small-Signal Current Gain Output Admittance CIB COB fT td tr ts tf NF hie hre hfe hoe Test Condition IC=10uA,IE=0 IC=1mA,IB=0 IE=10uA,IC=0 VCB=60V,IC=0 Min. Typ.Max.Units 60 40 6 VCE=30V,VEB(OFF)=3V VEB=5V,IC=0 IC=0.1mA,VCE=1.0V 40 IC=1mA,VCE=1.0V 70 IC=10mA,VCE=1.0V 100 IC=50mA,VCE=1.0V 60 IC=100mA,VCE=1.0V 30 IC=10mA,IB=1mA IC=50mA,IB=5mA IC=10mA,IB=1mA IC=50mA,IB=5mA VCB=5V,IE=0,f=1MHZ VEB=0.5V,IC=0,f=1MHZ IC=10mA,VCE=20V,f=100MHZ300 VCC=3V,VBE=-0.5V, IC=10mA,IB=1.0mA VCC=3V,VBE=-0.5V, IB1=IB2=1.0mA 1 VCE=5V,IC=100uAdc,RS=1. 0.5 0KΩ,f=1KHZ 100 1 0.1 50 50 0.1 V V V uA nA nA uA 300 0.2 0.3 0.85 0.95 4.0 8.0 V V V V pF pF MHZ nS nS nS nS dB pF 35 35 200 50 5 10 8 X10-4 400 40 θmhos *Pulse Test: Pulse Width