S8050

S8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 25Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Ÿ Collector current IC=0.5A. Ÿ Transition frequency f T >150MHz @ Ÿ IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC Ÿ directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Rank Range L H 3 C J3Y B 2 1 E 120-200 200-350 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.5 A PC Total Device Dissipation 0.3 W Thermal Resistance Form Junction to Ambient 625 TJ Junction Temperature 150 O TSTG Storage Temperature -55~+150 O RθJA O C/W C C S8050 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min. Typ.Max.Units IC=100uA,IE=0 40 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-Base breakdown voltage V(BR)EBO IE=100uA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=5V,IC=0 HFE IC=0.1mA,VCE=1.0V 40 HFE IC=1mA,VCE=1.0V 70 HFE IC=50mA,VCE=1.0V 100 HFE IC=100mA,VCE=1.0V 60 HFE IC=500mA,VCE=1.0V 30 DC current gain* V(BR)CBO Test Condition Collector-Emitter saturation voltage VCE(SAT) VCE=20V,IB=0 0.1 uA 0.1 uA 0.1 uA 0.1 uA 400 IC=100mA,IB=10mA 0.5 V IC=500mA,IB=50mA 0.6 V IC=100mA,IB=10mA 1.1 V IC=500mA,IB=50mA 1.2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=5V,IE=0,f=1MHZ 4.0 pF Output capacitance COB VEB=0.5V,IC=0,f=1MHZ 8.0 pF Transition ferquency fT IC=20mA,VCE=6V,f=30MHZ Delay time td 35 nS Rise time tr VCC=3V,VBE=-0.5V, IC=10mA,IB=1.0mA 35 nS Storage time ts 200 nS Fall time tf VCC=3V,VBE=-0.5V, IB1=IB2=1.0mA 50 nS 150 MHZ *Pulse Test: Pulse Width