WSP6044
N-Ch MOSFET
General Description
Product Summery
The WSP6044 is the highest performance trench
BVDSS
RDSON
ID
N-ch MOSFETs with extreme high cell density ,
60V
18mΩ
10A
which provide excellent RDSON and gate
Applications
charge for most of the synchronous buck
SMPS Synchronous Rectification.
converter applications .
DC-DC Conversion.
Features
Load Switch.
Reliable and Rugged
SOP-8 Pin Configuration
Lead Free and Green Devices Available
(RoHS Compliant)
Absolute Maximum Ratings (T= 25℃ Unless Otherwise Noted)
Parameter
Symbol
Rating
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
Unit
V
TJ
°C
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
ID
Continuous Drain Current
IDM a
PD
RJAc
-55 to 150
TA=25°C
5
TA=25°C
10
TA=70°C
8
TA=25°C
38
TA=25°C
3.5
TA=70°C
2.2
t ≤10s
35
Steady-State
70
A
Pulsed Drain Current
Maximum Power Dissipation
W
Thermal Resistance-Junction to Ambient
°C/W
IASb
Avalanche Current, Single pulse
L=0.1mH
27
A
EASb
Avalanche Energy, Single pulse
L=0.1mH
36
mJ
Note a:Pulse width limited by max. junction temperature.
Note b:UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature Tj=25℃).
Note c:Surface Mounted on 1in2 pad area.
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Page 1
Rev1.0 Jan.2021
WSP6044
N-Ch MOSFET
Electrical Characteristics
(T= 25℃ unless otherwise noted)
Test Conditions
Symbol Parameter
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS( th)
IGSS
VGS=0V, IDS=250 A
VDS =48V, VGS=0V
TJ=85°C
Min.
Typ.
Max.
Unit
60
-
-
V
-
-
1
-
-
30
1.4
-
2.4
V
nA
Gate Threshold Voltage
VDS =VGS, IDS=250 A
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±100
VGS=10V, IDS=10A
-
18
25
VGS=4.5V, IDS=7A
-
20
30
RDS(ON)d Drain-Source On-state Resistance
A
mΩ
VSDd
Diode Forward Voltage
ISD=10A, VGS=0V
-
0.8
1.3
V
trr
Reverse Recovery Time
-
21
-
ns
Qrr
Reverse Recovery Charge
ISD=10A,
dlSD/dt=100A/us
-
22
-
nC
RG
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
2.5
-
Ω
Ciss
Input Capacitance
-
2370
2780
Coss
Output Capacitance
-
135
-
Crss
Reverse Transfer Capacitance
-
60
-
td(ON)
Turn-on Delay Time
-
14
26
tr
Turn-on Rise Time
-
8
15
td(OFF)
Turn-off Delay Time
-
38
69
-
12
22
-
12
-
-
26
37
-
5
-
-
5
-
tf
Turn-off Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS=0V,
VDS =30V,
F=1.0MHz
VDD =30V,
RL=30,
IDS=1A,
VGEN=10V,
RG=6R
VDS =30V,
VGS=4.5V,
IDS=10A.
VDS =30V,
VGS=10V,
IDS=10A.
pF
ns
nC
Note d:Pulse test ; pulse width 300us, duty cycle≤2%.
Note e:Guaranteed by design, not subject to production testing.
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Page 2
Rev1.0 Jan.2021
WSP6044
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
12
4.0
3.5
10
ID - Drain Current (A)
Ptot - Power (W)
3.0
2.5
2.0
1.5
8
6
4
1.0
2
0.5
o
0.0
o
TA=25 C
0
20
40
60
0
80 100 120 140 160
TA=25 C,VG=10V
0
20
o
40
60
80 100 120 140 160
o
Tj - Junction Temperature ( C)
Tj - Junction Temperature ( C)
Safe Operation Area
Thermal Transient Impedance
100
2
Duty = 0.5
300ms
1ms
1
10ms
100ms
0.1
1s
DC
Normalized Effective Transient
)L
10
Rd
s(o
n
ID - Drain Current (A)
im
it
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
Mounted on 1in pad
o
RqJA :35 C/W
o
TA=25 C
0.01
0.01
0.1
1
10
100 300
1E-3
1E-4
VDS - Drain-Source Voltage (V)
www.winsok.tw
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
Page 3
Rev1.0 Jan.2021
WSP6044
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
40
34
VGS=4,5,6,7,8,9,10V
32
RDS(ON) - On Resistance (mW)
ID - Drain Current (A)
35
30
25
20
3V
15
10
5
30
VGS=4.5V
28
26
VGS=10V
24
22
20
0
0.0
2.5V
0.5
1.0
1.5
2.0
2.5
18
3.0
0
8
16
24
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
40
1.6
1.4
Normalized Threshold Voltage
35
RDS(ON) - On Resistance (mW)
40
IDS =250mA
IDS=10A
30
25
20
15
10
32
2
3
4
5
6
7
8
9
1.0
0.8
0.6
0.4
0.2
-50 -25
10
0
25
50
75
100 125 150
o
VGS - Gate-Source Voltage (V)
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1.2
Tj - Junction Temperature ( C)
Page 4
Rev1.0 Jan.2021
WSP6044
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
40
VGS = 10V
IDS = 10A
10
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
o
Tj=150 C
o
Tj=25 C
1
0.50
o
RON@Tj=25 C: 17mW
0.25
-50 -25
0
25
50
75
0.1
0.0
100 125 150
o
0.8
1.0
Capacitance
Gate Charge
10
Frequency=1MHz
9
1600
8
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
0.6
VSD - Source-Drain Voltage (V)
1800
Ciss
1400
1200
1000
800
600
400
0
0.4
Tj - Junction Temperature ( C)
2000
200
0.2
Coss
Crss
0
8
16
VDS=30V
IDS=10A
7
6
5
4
3
2
1
24
32
0
40
VDS - Drain-Source Voltage (V)
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1.2
0
4
8
12
16
20
24
28
QG - Gate Charge (nC)
Page 5
Rev1.0 Jan.2021
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