WSF20N20G

WSF20N20G N-Ch MOSFET General Description Product Summery The WSF20N20G is N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching . BVDSS RDSON ID 200V 0.12Ω 18A Applications performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.. z Uninterruptible Power Supply(UPS) z Power Factor Correction (PFC) Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V 1 18 A 1 10 A 72 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 340 mJ IAS Avalanche Current 15 A 3 3 PD@TC=25℃ Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 60 ℃/W --- 1.2 ℃/W Rev 1.0 Jun.2021 WSF20N20G N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Max. Unit 200 --- --- V --- 0.25 --- --- 0.12 0.16 V/℃ Ω 2.0 3.5 4.0 V --- -4.63 --- mV/℃ VDS=200V , VGS=0V , TJ=25℃ --- --- 1 VDS=160V , VGS=0V , TJ=125℃ --- --- 10 Reference to 25℃ , ID=1mA 2 Static Drain-Source On-Resistance Gate Threshold Voltage Typ. VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. VGS=10V , ID=4.5A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.12 --- Ω Qg Total Gate Charge (10V) --- 40 --- Qgs Gate-Source Charge --- 5.2 --- --- 18 --- --- 24 --- --- 45 --- --- 101 --- Fall Time --- 95 --- Ciss Input Capacitance --- 1317 --- Coss Output Capacitance --- 181 --- Crss Reverse Transfer Capacitance --- 76 --- Min. Typ. Max. Unit --- --- mJ Min. Typ. Max. Unit --- --- 18 A --- --- 72 A --- --- 1.4 V --- 230 --- nS --- 1.8 --- uC Qgd Td(on) Tr Td(off) Tf VDS=160V , VGS=10V , ID=18A Gate-Drain Charge Turn-On Delay Time VDD=100V , VGS=10V , Rise Time RG=25Ω,ID=18A Turn-Off Delay Time VDS=25V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A 250 Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=18A , TJ=25℃ IF=15A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t