WSD2075DN

WSD2075DN Dual P-Ch MOSFET General Description Product Summery The WSD2075DN is the highest performance trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -20V 9.5mΩ -36A Applications The WSD2075DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Features z Load Switch z Advanced high cell density Trench technology DFN3x3A-8_EP Pin Configuration Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings @TA=25℃ unless otherwise noted Symbol Parameter Ratings Unit VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V TC=25°C -36 A TC=100°C -23 A -108 A 23 W -55~150 ℃ 5.4 °C/W ID Drain Current (Continuous) *AC IDM Drain Current (Pulse) *B PD Power Dissipation TC=25°C TJ/TSTG Operating Temperature/ Storage Temperature RthJC Maximum Junction-to-Ambient www.winsok.tw Page 1 Rev1.0 May.2021 WSD2075DN Dual P-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID= -250μA -20 --- --- V IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V --- --- -1 μA Gate Threshold Voltage VGS = VDS, IDS= 250μA -0.4 -0.8 -1.2 V Gate Leakage Current VGS= ±12V, VDS=0V --- --- ±100 nA VGS = -10V, ID = -6A --- 9.5 12 mΩ VGS = -4.5V, ID = -6A --- 11 14 mΩ VGS = -2.5V, ID = -4A --- 14 18 mΩ Diode Forward Voltage ISD= -1A , VGS=0V --- -0.73 -1.2 V Diode Forward Current *AC TC =25°C --- --- -19 A --- 28 --- nC --- 3.5 --- nC Static VGS(TH) IGSS RDS(on) VSD IS Drain-Source On-state Resistance Switching Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 5.6 --- nC td ( on ) Turn-on Delay Time --- 30 --- ns tr Turn-on Rise Time --- 54 --- ns td( off ) Turn-off Delay Time --- 135 --- ns --- 63 --- ns --- 2565 --- pF --- 260 --- pF --- 240 --- pF tf VDS = -10V, VGS = 4.5V, ID = -9.5A VDD = -10V, RL = 1.3Ω ID ≅ -7.6A, VGEN = 4.5V, Rg = 1Ω Turn-Off Fall Time Dynamic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0 V, f = 1 MHz A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, Wire Bond Limited 10A. www.winsok.tw Page 2 Rev1.0 May.2021 WSD2075DN Dual P-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev1.0 May.2021 WSD2075DN Dual P-Ch MOSFET Typical Characteristics www.winsok.tw Page 4 Rev1.0 May.2021 WSD2075DN Dual P-Ch MOSFET Typical Characteristics www.winsok.tw Page 5 Rev1.0 May.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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