WSP4407A

WSP4407A P-Ch MOSFET Product Summery General Description The WSP4407A is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 12mΩ -11A Applications The WSP4407A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -11 A ID@TC=70℃ 1 -10.5 A -60 A IDM Continuous Drain Current, VGS @ -10V 2 300uS Pulsed Drain Current 3 EAS Single Pulse Avalanche Energy 101 mJ IAS Avalanche Current -26 A 4 PD@TA=25℃ Total Power Dissipation 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 75 ℃/W --- 24 ℃/W Rev 2: Apr.2019 WSP4407A P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ VGS=-10V , ID=-13A --- 12 14 --- 15 21 -1.5 -2.0 -2.5 V --- 5.04 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 18 --- S Qg Total Gate Charge (-4.5V) --- 31 --- Qgs Gate-Source Charge --- 4.3 --- --- 10 --- Qgd VDS=-15V , VGS=-4.5V , ID=-13A Gate-Drain Charge uA nC --- 13 --- Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 15 --- Turn-Off Delay Time ID=-1A ,RL=15Ω --- 50 --- Fall Time --- 29 --- Ciss Input Capacitance --- 1550 1655 Coss Output Capacitance --- 315 425 Crss Reverse Transfer Capacitance --- 245 345 Min. Typ. Max. Unit 98 --- --- mJ Min. Typ. Max. Unit --- --- -4.0 A --- --- -60 A --- --- -1.1 V --- 22 --- nS --- 15 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-26A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-13A,dI/dt=100A/µs,TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t