WST8205A

WST8205A Dual N-Ch MOSFET General Description Product Summery The WST8205A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 32mΩ 5.3A Applications The WST8205A meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features SOT-23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V 1 5.8 A 1 3.8 A 16 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 70 ℃/W Rev 1: May.2019 WST8205A Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=4.5V , ID=5.5A --- 32 40 --- 46 50 0.5 0.7 1.2 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=2.5V , ID=3.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 8.3 11.9 Qgs Gate-Source Charge --- 1.4 2.0 Qgd Gate-Drain Charge --- 2.2 3.2 VDS=10V , VGS=4.5V , ID=5.5A uA nC --- 5.7 11.6 Rise Time VDD=10V , VGEN=4.5V , RG=6Ω --- 34 63 Turn-Off Delay Time ID=5A, RL=10Ω --- 22 46 Fall Time --- 9.0 18.4 Ciss Input Capacitance --- 625 889 Coss Output Capacitance --- 69 98 Crss Reverse Transfer Capacitance --- 61 88 Min. Typ. Max. Unit --- --- 1.5 A --- --- 16 A --- --- 1.2 V --- 7.1 --- nS --- 1.8 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WST8205A Dual N-Ch MOSFET Typical Characteristics 58 20 VGS=5V 16 VGS=4.5V 14 VGS=3V 48 VGS=2.5V 12 10 8 ID=5.5A 53 RDSON (mΩ) ID Drain Current (A) 18 VGS=1.8V 6 43 38 33 28 4 2 20 0 0 0.25 0.5 0.75 0 1 2 4 VDS , Drain-to-Source Voltage (V) VGS (V) 6 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 7 VDS=10V ID=5.5A IS Source Current(A) 6 5 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 150 Rev 1: May.2019 WST8205A Dual N-Ch MOSFET 1000 100.00 100us 10.00 1ms 100 ID (A) Capacitance (pF) Ciss 1.00 Coss 10ms Crss 100ms 0.10 DC o TA=25 C Single Pulse F=1.0MHz 10 0 5 10 15 20 VDS , Drain to Source Voltage (V) 0.01 0.01 Fig.7 Capacitance 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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