WST3404A

WST3404A N-Ch MOSFET General Description Product Summery The WST3404A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 30mΩ 5.3A Applications The WST3404A meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 5.5 A ID@TC=70℃ 1 4.5 A 20 A IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 24 mJ IAS Avalanche Current 8 A 4 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 90 ℃/W --- 75 ℃/W Rev:1.0 May.2019 WST3404A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ --- 30 32 --- 39 44 1.0 1.4 2.0 V --- -4.2 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=10V , ID=5.8A VGS=4.5V , ID=5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 2.0 Ω Qg Total Gate Charge (4.5V) --- 7.6 9.9 Qgs Gate-Source Charge --- 1.3 1.7 --- 1.7 2.2 20.3 Qgd VDS=15V , VGS=4.5V , ID5.8A Gate-Drain Charge uA nC --- 10.1 Rise Time VDD=15V , VGS=10V , RG=6Ω, --- 3.2 6.3 Turn-Off Delay Time ID=1A, RL=15Ω. --- 22.2 44.4 Fall Time --- 3 6 Ciss Input Capacitance --- 450 --- Coss Output Capacitance --- 86.2 --- Crss Reverse Transfer Capacitance --- 59.4 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=8A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=8A , dI/dt=100A/µs , TJ=25℃ --- --- 3 A --- --- 15 A --- --- 1.2 V --- 7.8 --- nS --- 2.1 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t