WSP4800

WSP4800 Dual N-Channel MOSFET General Description Product Summery The WSP4800 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 32mΩ 6.0A Applicatio The WSP4800 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Power Management in Note book. z Battery Powered System. zIndustrial DC/DC Conversion Circuits Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 6.0 A ID@TC=70℃ Continuous Drain Current, VGS @ 10V 5.4 A 28 A IDM a Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TA=25°C 1.5 A PD@TA=70℃ Total Power Dissipation TA=70°C 1.28 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Typ. Junction-ambientb Thermal Resistance Junction-Case Max. Unit --- 110 ℃/W --- 62.5 ℃/W Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area, t =999sec. o o Note c：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T j=25 C). www.winsok.tw Page 1 Rev 1: Apr.2019 WSP4800 Dual N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON)c Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg d Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=6.0A --- 32 35 VGS=4.5V , ID=5.0A --- 36 40 VGS=VDS , ID =250uA 1.0 1.6 2.5 VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 30 VGS=±20V , VDS=0V --- --- ±100 --- 7.5 --- --- 3.24 --- --- 2.75 ----- Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=20V , VGS=4.5V , ID=6A --- 7.8 Rise Time VDD=20V,VGEN=10V,RG=6Ω --- 6.9 --- Turn-Off Delay Time , ID=1A,RL=20Ω. --- 22.4 --- Fall Time --- 4.8 --- Ciss Input Capacitance --- 815 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 60 --- Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=20V , VGS=0V , f=1MHz mΩ V uA nA nC ns pF Note c：Pulse test ; pulse width£300ms, duty cycle£2%. Note d：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 1: Apr.2019 WSP4800 Dual N-Channel MOSFET Typical Characteristics Drain Current Power Dissipation 2.4 8 7 2.0 ID - Drain Current (A) Ptot - Power (W) 6 1.6 1.2 0.8 5 4 3 2 0.4 1 o o 0.0 TA=25 C 0 20 40 60 80 0 100 120 140 160 Tj - Junction Temperature (°C) 1ms 10ms 0.1 1s 100ms TA=25 C 0.01 0.01 DC 0.1 1 10 100 300 Normalized Transient Thermal Resistance im it R ds (o n) L ID - Drain Current (A) 300ms o 40 60 80 100 120 140 160 2 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RqJA :110 C/W 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) www.winsok.tw 20 Thermal Transient Impedance 100 1 0 Tj - Junction Temperature (°C) Safe Operation Area 10 TA=25 C,VG=10V Page 3 Rev 1: Apr.2019 WSP4800 Dual N-Channel MOSFET Drain-Source On Resistance Output Characteristics 30 30 VGS=4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) ID - Drain Current (A) VGS=4.5V 3.5V 25 20 15 10 3V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 10 0 5 10 15 20 25 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 60 50 40 30 20 10 3 4 5 6 7 8 9 IDS =250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 30 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 15 5 3.0 IDS=6A 2 VGS=10V 20 VDS - Drain - Source Voltage (V) 70 0 25 Page 4 Rev 1: Apr.2019 WSP4800 Dual N-Channel MOSFET Drain-Source On Resistance 2.0 30 VGS = 10V IDS = 6A 10 1.6 IS - Source Current (A) Normalized On Resistance 1.8 Source-Drain Diode Forward 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o 0.2 -50 -25 RON@Tj=25 C: 17mW 0 25 50 75 0.6 0.8 1.0 1.2 Capacitance Gate Charge VDS=20V 9 I =6A DS VGS - Gate-source Voltage (V) Ciss 800 600 400 200 Coss 10 15 20 25 30 35 7 6 5 4 3 2 0 0 40 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 8 1 Crss 5 1.4 10 Frequency=1MHz 0 0.4 VSD - Source - Drain Voltage (V) 1000 0 0.2 Tj - Junction Temperature (°C) 1200 C - Capacitance (pF) 0.1 0.0 100 125 150 Page 5 Rev 1: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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