WSTBSS138
N-Ch MOSFET
General Description
Product Summery
The WSTBSS138 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck
converter applications .
BVDSS
RDSON
60V
110mΩ
ID
2.1A
Applications
The WSTBSS138 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
SOT-23-3L Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=70℃
IDM
Rating
Units
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
1
2.1
A
1
1.5
A
10
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
15
mJ
IAS
Avalanche Current
21
A
Total Power Dissipation
1.25
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
PD@TA=25℃
4
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Typ.
Max.
Unit
---
125
℃/W
---
25
℃/W
Rev:1.0 May.2019
WSTBSS138
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
55
---
---
V
Reference to 25℃ , ID=1mA
---
0.041
---
V/℃
VGS=4.5V , ID=2.1A
---
85
110
VGS=2.5V , ID=1.5A
---
95
120
1.0
1.5
2.5
V
---
-4.7
---
mV/℃
VDS=44V , VGS=0V , TJ=25℃
---
---
1
VDS=44V , VGS=0V , TJ=85℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=4A
---
10
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Ω
Qg
Total Gate Charge (10V)
---
2.1
3.9
Qgs
Gate-Source Charge
---
0.6
---
Qgd
Gate-Drain Charge
---
0.8
-----
VDS=27V , VGS=4.5V , ID=2.1A
uA
nC
---
3.6
Rise Time
VDD=27V , VGS=10V , RG=6Ω
---
3.5
---
Turn-Off Delay Time
ID=1A
---
32
---
Fall Time
---
3
---
Ciss
Input Capacitance
---
295
---
Coss
Output Capacitance
---
40
---
Crss
Reverse Transfer Capacitance
---
15
---
Min.
Typ.
Max.
Unit
15.2
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
1
A
---
---
4
A
---
---
1.2
V
---
10.1
---
nS
---
6.4
---
nC
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Parameter
Symbol
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=4A , dI/dt=100A/µs , TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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