KTC4379
Rev.F Jan.-2019
描述
/
DATA SHEET
Descriptions
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.
特征
/ Features
饱和压降低,开关时间快,体积小,可与互补 KTA1666。无卤产品。
Low saturation voltage, high speed switching time, small flat package Complementary to KTA1666.
HF Product.
用途
/
Applications
用于功率放大和开关。
Power amplifier and switching applications.
内部等效电路
引脚排列
1
2
/ Pinning
3
PIN1:Base
印章代码
/ Equivalent Circuit
PIN 2:Collector
PIN 3:Emitter
/ Marking
hFE Classifications
Symbol
hFE Range
70~140
120~240
HMO
HMY
**
http://www.fsbrec.com
Y
**
Marking
O
1/6
KTC4379
Rev.F Jan.-2019
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current - Continuous
IC
2.0
A
Collector Base – Continuous
IB
0.4
A
Collector Power Dissipation
PC
500
mW
Collector Power Dissipation*
*PC
1
W
Tj
150
℃
Tstg
-55~150
℃
Junction Temperature
Storage Temperature Range
2
* KTC4379 mounted on ceramic substrate(250mm ×0.8t).
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
Collector Cut-Off Current
ICBO
VCB=50V
IE=0
0.1
μA
Emitter Base Cut-Off Current
Collector to Emitter Breakdown
Voltage
IEBO
VEB=5.0V
IC=0
0.1
μA
VCEO
IC=10mA
IB=0
50
hFE(1)
VCE=2.0V
IC=0.5A
70
hFE(2)
VCE=2.0V
IC=1.5A
40
DC Current Gain
V
240
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=1.0A
IB=0.05A
0.5
V
Base to Emitter Saturation Voltage
VBE(sat))
IC=1.0A
IB=0.05A
1.2
V
VCE=2.0V
VCB=10V
f=1MHz
IC=0.5A
IE=0
Transition Frequency
fT
Collector Output Capacitance
Cob
Turn-on Time
ton
Storage Time
tstg
Turn-off Time
tf
http://www.fsbrec.com
IB1=-IB2=0.05A
120
MHz
30
pF
0.1
μS
1.0
μS
0.1
μS
2/6
KTC4379
Rev.F Jan.-2019
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
http://www.fsbrec.com
3/6
KTC4379
Rev.F Jan.-2019
外形尺寸图
DATA SHEET
/ Package Dimensions
http://www.fsbrec.com
4/6
KTC4379
Rev.F Jan.-2019
/
Marking Instructions
HMO
**
印章说明
DATA SHEET
说明:
H:
为公司代码
M:
为型号代码
O:
为 hFE 档次代码
**:
为生产批号代码,随生产批号变化。
Note:
H:
Company Code.
M:
Product Type.
O:
hFE Classifications
**:
Lot No. Code, code change with Lot No.
http://www.fsbrec.com
Symbol
5/6
KTC4379
Rev.F Jan.-2019
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 150~180℃,时间 60~90sec;
1.Preheating:150~180℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Time:10±1 sec
/ REEL
Package Type
封装形式
使用说明
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
SOT-89
时间:10±1 sec.
Units 包装数量
Dimension
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
1,000
7
7,000
6
42,000
包装尺寸
3
(unit:mm )
Reel
Inner Box 盒
Outer Box 箱
7〞×12
180×120×180
390×385×205
/ Notices
http://www.fsbrec.com
6/6
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