1SS226

SWITCHING DIODES Maximum Ratings @TA=25℃ Para Symbol Limits Unit Non-Repetitive Peak reverse VRM 85 V DC Blocking VR 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA Power Dissipation PD 150 mW Junction temperature TJ 125 ℃ TSTG -55-125 ℃ Voltage Storage temperature range Electrical Characteristics @T A=25℃ Para Reverse Breakdown Voltage Forward voltage Reverse current Symbol V (BR)R Min. Typ. Max. 80 Unit Conditions V IR=100μA VF1 0.61 V IF=1mA VF2 0.74 V IF=10mA VF3 0.92 1.2 V IF=100mA IR1 0.1 uA VR=30V IR2 0.5 uA VR=80V Capacitance between terminals CT 2.2 4.0 pF VR=0,f=1MHz Reverse recovery time t 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR rr 1 of 3 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd.