1SS226

UMW R UMW 1SS226 SOT-23 Plastic-Encapsulate Transistors SOT-23 1SS226 SWITCHING DIODE FEATURES Low forward voltage z z Fast reverse recovery time z Small total capacitance 1. BASE 2. EMITTER 3. COLLECTOR MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃ Parameter Symbol Limit Unit 85 Non-Repetitive Peak Reverse Voltage VRM Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM V 80 V DC Blocking Voltage VR Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA Peak Forward Surge Current @t=10ms 2 IFSM A Power Dissipation PD 150 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test V(BR) IR= 100uA conditions Min Max 80 Unit V Reverse voltage leakage current IR VR=80V 0.5 uA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=0V , f=1MHz 3 pF Reverse recovery time t rr IF=10mA 4 ns www.umw-ic.com 1 友台半导体有限公司 UMW R UMW 1SS226 SOT-23 Plastic-Encapsulate Transistors Forward 100 Characteristics Reverse 1000 Characteristics (mA) Ta=100℃ (nA) REVERSE CURRENT IR 1 Ta =2 5℃ FORWARD CURRENT IF Ta =1 00 ℃ 10 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 Ta=25℃ 10 1 1.2 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 100 60 VR 80 (V) Power Derating Curve 200 (mW) 150 PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 1.0 0.8 0 5 10 REVERSE VOLTAGE www.umw-ic.com 15 VR 100 50 0 20 (V) 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW 1SS226 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司