BF817B

BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler SCHEMATIC Description The BF817 series combine an AlGaAs infrared inf emitting diode as the emitter which is optically 1 4 2 3 coupled to a silicon planar phototransistor detector in a plastic DIP4 package with different lead forming options. With the robust coplanar double mold structure, BF817 series provide the most stable isolation feature. Features
High isolation 5000 VRMS
CTR flexibility available see order PIN DEFINITION 1. Anode 2. Cathode 3. Emitter 4. Collector information PACKAGE OUTLINE
DC input with transistor output
Operating temperature range - 55 °C to 110 °C
REACH compliance
Halogen free
MSL class 1
Regulatory Approvals  UL - UL1577  VDE - EN60747-5-5(VDE0884 5(VDE0884-5)  CQC – GB4943.1, GB8898 Applications • Switch mode power supplies • Programmable controllers • Household appliances • Office equipment Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 1 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT NOTE INPUT Forward Current IF 60 mA Peak Forward Current IFP 1 A Reverse Voltage VR 6 V Input Power Dissipation PI 100 mW Collector - Emitter Voltage VCEO 35 V Emitter - Collector Voltage VECO 7 V Collector Current IC 50 mA Output Power Dissipation PO 150 mW Total Power Dissipation Ptot 200 mW Isolation Voltage Viso 5000 Vrms Operating Temperature Topr -55~110 °C Storage Temperature Tstg -55~125 °C Soldering Temperature Tsol 260 °C 1 OUTPUT COMMON 2 Note 1.100μs pulse, 100Hz frequency Note 2. AC For 1 Minute, R.H. = 40 ~ 60% Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 2 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25°C PARAMETER SYMBOL MIN TYP. MAX. UNIT TEST CONDITION NOTE INPUT Forward Voltage VF - 1.24 1.4 V IF=10mA Reverse Current IR - - 10 µA VR=6V Input Capacitance Cin - 10 - pF V=0, f=1kHz OUTPUT Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage ICEO - - 100 nA VCE=20V, IF=0 BVCEO 35 - - V IC=0.1mA, IF=0 BVECO 7 - - V IE=0.1mA, IF=0 TRANSFER CHARACTERISTICS BF817 50 - 600 Current BF817A 80 - 160 Transfer Ratio BF817B 130 - 260 BF817C 200 - 400 BF817D 300 - 600 - 0.06 Collector-Emitter Saturation Voltage CTR VCE(sat) 10^12 10^14 % IF=5mA, VCE=5V 0.2 V IF=20mA, IC=1mA - Ω DC500V, 40 ~ 60% R.H. Isolation Resistance RISO Floating Capacitance CIO - 0.4 1 pF V=0, f=1MHz Cut-off Frequency fc - 80 - kHz VCE=2V, IC=2mA RL=100Ω,-3dB Response Time (Rise) tr - 3 18 µs Response Time (Fall) tf - 4 18 µs VCE=2V, IC=2mA RL=100Ω 3 4 4 Note 3. Fig.12&13 Note 4. Fig.14 Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 3 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler CHARACTERISTIC CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs.Ambient Temperature Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Dark Current vs.Ambient Temperature Fig.5 Collector Current Fig.6 Collector Current vs. Collector-emitter emitter Voltage vs. Collector-emitter emitter Voltage Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 4 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler CHARACTERISTICCURVES Fig.7 Normalized Current Transfer Ratio vs. Forward Current Fig.8 Normalized Current Transfer Ratio vs.Ambient Temperature Fig.9 Collector-emitter emitter Saturation Voltage vs. Ambient Temperature Fig.10 Switching Time vs.Load Resistance Fig.11 Frequency Response Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 5 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler TEST CIRCUITS Fig.12 Test Circuits of Response Time Fig.13Curves s of Response Time Fig.14Test Circuits of Frequency Response Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 6 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler PACKAGE DIMENSIONS (Dimensions in mm unless otherwise stated) Standard DIP – Through Hole (DIP Type) Gullwing (400mil) Lead Forming – Through Hole (M Type) Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 7 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler PACKAGE DIMENSIONS (Dimensions in mm unless otherwise stated) Surface Mount Lead Forming (S Type) Surface Mount (Low Profile) Lead Forming (SL Type) Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 8 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler PACKAGE DIMENSIONS (Dimensions in mm unless otherwise stated) Surface Mount (Gullwing) Lead Forming (SLM Type) RECOMMENDED SOLDER OLDER MASK (Dimensions in mm unless otherwise stated) Surface Mount Lead Forming & Surface Mount (Low Profile) Lead Forming Surface Mount (Gullwing) Lead Forming Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 9 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler TUBE SPECIFICATIONS (Dimensions in mm unless otherwise stated) Standard DIP Option M Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 10 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler BOX SPECIFICATIONS (Tube Type) Inner Box
L x W x H = 52.5cm x 10.7cm x 4.7cm Outer Box
L x W x H = 53.5cm x 23.5cm x 25.5cm Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 11 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler CARRIER ARRIER TAPE SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option S(T1) & SL(T1) Option S(T2) & SL(T2) Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 12 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler CARRIER ARRIER TAPE SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option S(T3) & SL(T3) Option S(T4) & SL(T4) Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 13 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler CARRIER ARRIER TAPE SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option SLM(T1) Option SLM(T2) Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 14 BF BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler REEL SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option S& Option SL Option SLM Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 15 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler BOX SPECIFICATIONS (Reel Type) Inner Box
L x W x H = 36cm x 36cm x 6.9cm Outer Box
L x W x H = 45cm x 38cm x 38cm Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 16 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler ORDERING AND MARKING INFORMATION MARKING INFORMATION BF F817X VYAWW BF F 817 : Company Abbr. : Leadframe Option : Part Number X V Y A : CTR Rank : VDE Option : Fiscal Year : Manufacturing Code WW : Work Week ORDERING INFORMATION LABEL INFORMATION BF817X(Y)(Z)-FGV BF – Company Abbr. 817 – Part Number X – Rank (A/B/C/D or None) Y – Lead Form Option (M/S/SL/SLM/None) Z – Tape and Reel Option (T1/T2/T3/T4) F– Leadframe Option (F:Iron, None:Copper) G – Green V – VDE Option (V or None) Packing Quantity Option Quantity Quantity – Inner box Quantity – Outer box None 100 Units/Tube 32 Tubes/Inner box 10 Inner box/Outer box = 32k Units M 100 Units/Tube 28 Tubes/Inner box 10 Inner box/Outer box = 28k Units S(T1) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units S(T2) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units S(T3) 1000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 15k Units S(T4) 1000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 15k Units SL(T1) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units SL(T2) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units SL(T3) 1000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 15k Units SL(T4) 1000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 15k Units SLM(T1) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units SLM(T2) 1500 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 22.5k Units Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 17 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler REFLOW INFORMATION REFLOW PROFILE Profile Feature Sn-Pb Assembly Profile Pb-Free Assembly Profile Temperature Min. (Tsmin) 100 150°C Temperature Max. (Tsmax) 150 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. 3°C/second max. Liquidous Temperature (TL) 183°C 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds 60 – 150 seconds Peak Body Package Temperature 235°C +0°C / -5°C 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 20 seconds 30 seconds Ramp-down Rate (TP to TL) 6°C/second max 6°C/second max Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 18 BF817 Series www.bfsemi.com DIP4, DC Input, Photo Transistor Coupler DISCLAIMER
BF SEMICONDUCTOR is continually improving the quality, reliability, function and design. BF SEMICONDUCTOR reserves the right to make changes without further notices.
The characteristic curves shown in this datasheet are representing typical performance which are not guaranteed.
BF SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, BF SEMICONDUCTOR disclaims (a) any and all liability arising out of the application or use of any product, (b) any and all liability, including without limitation special, consequential or incidental damages, and (c) any and all implied warranties, including warranties of fitness for particular
The products shown in this publication are designed for the general use in electronic applications such as office automation, equipment, communications devices, audio/visual equipment, electrical application and instrumentation purpose, non-infringement and merchantability.
This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or lifesaving applications or any other application which can result in human injury or death.
Please contact BF SEMICONDUCTOR sales agent for special application request.
Immerge unit’s body in solder paste is not recommended.
Parameters provided in datasheets may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated in each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify BF SEMICONDUCTOR’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Discoloration might be occurred on the package surface after soldering, reflow or long-time use. It neither impacts the performance nor reliability. Document No:DWI-001 Rev: A01 Release Date: 2019/1/24 19