LNG5N50

LNC5N50\LND5N50\LNG5N50\LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 500V advanced ID 5A planar VDMOS technology. The resulting device has low conduction resistance, RDS(on),max 1.6Ω superior switching performance and high avalanche Qg,typ 12.8 nC energy. Features  Low RDS(on)  Low gate charge (typ. Qg = 12.8 nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 TO-220F D Applications G  Power factor correction.  Switched mode power supplies.  LED driver. S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDSS Continuous drain current ( TC = 25°C ) ID Avalanche energy, single pulse Peak diode recovery dv/dt 2) V A A 20 A VGSS ±30 V EAS 210 mJ 5 V/ns 30 W 0.24 W/°C 75 W 0.6 W/°C -55 to +150 °C dv/dt 3) 500 5 IDM Gate-Source voltage Unit 3.1 ( TC = 100°C ) Pulsed drain current 1) Value Power Dissipation TO-220F ( TC = 25°C ) Derate above 25°C PD Power Dissipation TO-220\TO-251\TO-252 ( TC = 25°C ) Derate above 25°C Operating junction and storage temperature range TJ, TSTG Continuous diode forward current IS 5 A Diode pulse current IS,pulse 20 A Thermal Characteristics Parameter Symbol Value TO-220F TO-220\TO-251\TO-252 Unit Thermal resistance, Junction-to-case RθJC 4.17 1.67 °C/W Thermal resistance, Junction-to-ambient RθJA 62.5 110 °C/W Version 1.2,Jan-2020 1 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Package Marking and Ordering Information Device Device Package Marking Units/Tube LNC5N50 TO-220 LNC5N50 50 LND5N50 TO-220F LND5N50 50 LNG5N50 TO-252 LNG5N50 LNH5N50 TO-251 LNH5N50 Electrical Characteristics Parameter Units/Reel 3000 80 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 500 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA 2 - 4 V Drain cut-off current IDSS VDS=500 V, VGS=0 V, Tj = 25°C - - 1 μA Tj = 125°C - 100 Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=2.5 A - 1.35 1.60 Ω Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 537.5 - Output capacitance Coss f = 1 MHz - 80.3 - Reverse transfer capacitance Crss - 4 - Turn-on delay time td(on) VDD = 250 V, ID = 5 A - 10.3 - Rise time tr RG = 10 Ω, VGS=15 V - 33.1 - Turn-off delay time td(off) - 29.4 - Fall time tf - 13.2 Dynamic characteristics pF ns - Gate charge characteristics Gate to source charge Qgs VDD=400 V, ID=5 A, - 3.9 - Gate to drain charge Qgd VGS=0 to 10 V - 4.6 - Gate charge total Qg - 12.8 - Gate plateau voltage Vplateau - 5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=5 A - - 1.5 V Reverse recovery time trr VR=250 V, IF=5 A, - 319.2 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 1.6 - μC Peak reverse recovery current Irrm - 10.2 - A Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 6.5A, Starting Tj= 25°C. 3. ISD = 5A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. Version 1.2,Jan-2020 2 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V VGS=9V VGS=6V VGS=8V Tc = 25°C VGS=7V VGS=5.5V Tc = 150°C VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=10 V IDS=2.5 A Pulse test VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) Version 1.2,Jan-2020 3 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics VDS=250 Ciss Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Crss ID = 5 A VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220F TO-220/TO-251/TO-252 100us 100us 10ms Limited by RDS(on) 1ms 10ms 1ms Limited by RDS(on) DC Notes: T = 25°C c Notes: T = 25°C j T = 150°C c T = 150°C j Single Pulse Single Pulse VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220F TO-220/TO-251/TO-252 Tc ,Case temperature (°C) Version 1.2,Jan-2020 DC Tc ,Case temperature (°C) 4 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Figure 13. Continuous Drain Current vs. Temperature Figure 14. Body Diode Transfer Characteristics Tc = 150° C Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F P DM In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t Duty = t/T T Z (t)=4.17°C/W Max. θJC t ,Pulse Width (s) Figure 16. Transient Thermal Impedance, Junction to Case, TO-220/TO-251/TO-252 In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse P DM t Duty = t/T Z (t)=1.67°C/W Max.T θJC t ,Pulse Width (s) Version 1.2,Jan-2020 5 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 1.2,Jan-2020 6 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Mechanical Dimensions for TO-220 UNIT：mm SYMBOL MIN NOM A 4 4.8 B 1.2 1.4 B1 1 1.4 b1 0.75 0.95 c 0.4 0.55 D 15 16.5 D1 5.9 6.9 E 9.9 10.7 e 2.44 F 1.1 1.4 L 12.5 14.5 L1 3 3.5 4 ΦP 3.7 3.8 3.9 Q 2.5 3 Q1 2 2.9 Y 8.02 2.54 8.12 MAX 2.64 8.22 TO-220 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten G LNC5N50 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.2,Jan-2020 7 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Mechanical Dimensions for TO-220F UNIT：mm SYMBOL MIN NOM MAX A 4.5 4.9 A1 2.3 2.9 b 0.65 0.9 b1 1.1 1.7 b2 1.2 1.4 c 0.35 0.65 D 14.5 16.5 D1 6.1 6.9 E 9.6 10.3 E1 6.5 7 7.5 e 2.44 2.54 2.64 L 12.5 14.3 L1 9.45 10.05 L2 15 16 L3 3.2 4.4 ΦP 3 3.3 Q 2.5 2.9 TO-220F Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.2,Jan-2020 Lonten LND5N50 ABYWW99 Part Number “99” Manufacturing Code 8 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Mechanical Dimensions for TO-252 UNIT：mm SYMBOL MIN NOM A 2.10 2.50 B 0.80 1.25 b 0.50 0.85 b1 0.50 0.90 b2 0.45 0.60 C 0.45 0.60 D 6.35 6.75 D1 5.10 5.50 E 5.80 6.30 e1 2.25 e2 4.45 4.75 L1 9.50 10.20 L2 0.90 1.45 L3 0.60 1.10 K -0.1 0.10 2.30 MAX 2.35 TO-252 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNG5N50 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.2,Jan-2020 9 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Mechanical Dimensions for TO-251 UNIT：mm SYMBOL MIN A 2.10 2.50 A1 0.95 1.30 B 0.80 1.25 b 0.50 0.80 b1 0.70 0.90 C 0.45 0.60 C1 0.45 0.60 D 6.35 6.75 D1 5.10 5.50 E 5.80 6.30 e 2.25 L 7.70 8.50 L1 1.45 1.95 R NOM 2.30 MAX 2.35 0.30 TO-251 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNH5N50 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.2,Jan-2020 10 www.lonten.cc LNC5N50\LND5N50\LNG5N50\LNH5N50 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.2,Jan-2020 11 www.lonten.cc