深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
GX817
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
GX817 Series
Schematic
Features:
• Compliance Halogens Free (Only copper leadframe)
(Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
• Current transfer ratio
(CTR: 50~600% at IF = 5mA, VCE = 5V)
• High isolation voltage between input
and output (Viso = 5000Vrms)
• Creepage distance > 7.62mm
• Operating temperature up to +110°C
• Compact small outline package
•The product itself will remain within RoHS compliant version
• Compliance with EU REACH
• UL and cUL approved(No.E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The GX817 series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
1
深圳市国芯佳品半导体有限公司
GX817
Guo Xin Jia Pin SEMICONDUTOR
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Forward current
IF
60
mA
Peak forward current (1us, pulse)
IFP
1
A
Reverse voltage
VR
6
V
100
mW
2.9
mW/°C
150
mW
5.8
mW/°C
IC
50
mA
Collector-Emitter voltage
VCEO
35
V
Emitter-Collector voltage
VECO
6
V
PTOT
200
mW
Isolation Voltage*
VISO
5000
V rms
Operating Temperature
TOPR
-55 to 110
°C
Storage Temperature
TSTG
-55 to 125
°C
TSOL
260
°C
Input
Power dissipation
PD
Derating factor (above Ta = 100°C)
Power dissipation
PC
Derating factor (above Ta = 100°C)
Output
Collector current
Total Power Dissipation
1
2
Soldering Temperature*
Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds
2
深圳市国芯佳品半导体有限公司
GX817
Guo Xin Jia Pin SEMICONDUTOR
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
VF
-
1.2
1.4
V
IF = 20mA
Reverse Current
Input capacitance
IR
-
30
10
250
µA
pF
VR = 4V
V = 0, f = 1kHz
Symbol
Min
Typ.
Max.
Unit
Condition
ICEO
-
-
100
nA
VCE = 20V, IF = 0mA
BVCEO
35
-
-
V
IC = 0.1mA
BVECO
6
-
-
V
IE = 0.1mA
Symbol
Min
Typ.
Max.
Unit
Condition
GX817
50
-
600
GX817A
80
-
160
GX817B
130
-
260
200
-
400
%
IF = 5mA ,VCE = 5V
GX817D
300
-
600
GX817X
100
-
200
GX817Y
150
-
300
-
0.1
0.2
V
IF = 20mA ,IC = 1mA
-
-
VIO = 500Vdc,
40~60% R.H.
Cin
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Transfer Characteristics
Parameter
Current
Transfer
ratio
CTR
GX817C
Collector-Emitter
saturation voltage
VCE(sat)
RIO
Floating capacitance
CIO
-
0.6
1.0
pF
VIO = 0, f = 1MHz
Cut-off frequency
fc
-
80
-
kHz
VCE = 5V, IC = 2mA
RL = 100, -3dB
Rise time
tr
-
-
18
µs
tf
-
-
18
µs
Fall time
5×10
10
Isolation resistance
* Typical values at Ta = 25°C
3
VCE = 2V, IC = 2mA,
RL = 100
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
Typical Electro-Optical Characteristics Curves
4
GX817
深圳市国芯佳品半导体有限公司
GX817
Guo Xin Jia Pin SEMICONDUTOR
VCC
IF
IC
Input
Pulse
RL
Output
Input
10%
Output
Pulse
RIN
tr
ton
Figure 7. Switching Time Test Circuit & Waveforms
5
90%
tf
toff
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
GX817
Order Information
Part Number
GX817X (Y)(Z)-FV
Note
X
Y
Z
F
V
= Lead form option (S1, S2, M or none)
= CTR Rank (A, B, C, D, X , Y or none)
= Tape and reel option (TU, TD or none)
= Lead frame option (F: Iron, None: copper)
= VDE safety (optional)
Option
Description
Packing quantity
None
Standard DIP-4
100 units per tube
M
Wide lead bend (0.4 inch spacing)
100 units per tube
S1 (TU)
Surface mount lead form (low profile) + TU tape & reel option
1500 units per reel
S1 (TD)
Surface mount lead form (low profile) + TD tape & reel option
1500 units per reel
S2 (TU)
Surface mount lead form (low profile) + TU tape & reel option
2000 units per reel
S2 (TD)
Surface mount lead form (low profile) + TD tape & reel option
2000 units per reel
6
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
Package Dimension (Dimensions in mm)
Standard DIP Type
Option M Type
7
GX817
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
Option S1 Type
Option S2 Type
8
GX817
深圳市国芯佳品半导体有限公司
GX817
Guo Xin Jia Pin SEMICONDUTOR
Recommended pad layout for surface mount leadform
For S1 option
For S2 option
Notes
Suggested pad dimension is just for reference only.
Please modify the pad dimension based on individual need.
9
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
Device Marking
EL
817
FRYWWV
Notes
817
F
R
Y
WW
V
denotes Device Number
denotes Factory Code (G: China and Green part)
denotes CTR Rank (A, B, C, D , X , Y or none)
denotes 1 digit Year code
denotes 2 digit Week code
denotes VDE (optional)
10
GX817
深圳市国芯佳品半导体有限公司
GX817
Guo Xin Jia Pin SEMICONDUTOR
Tape & Reel Packing Specifications
Option TD
Option TU
Direction of feed from reel
Direction of feed from reel
Tape dimensions
Dimension No.
Dimension (mm)
S1
Dimension (mm)
S2
Dimension No.
Dimension (mm)
S1
Dimension (mm)
S2
Ao
Bo
Do
D1
E
F
4.90±0.1
10.40±0.1
1.5±0.1
1.50±0.1
1.75±0.1
7.50±0.1
4.88±0.1
12.55±0.1
1.5±0.1
1.50±0.1
1.75±0.1
11.5±0.1
Po
P1
P2
t
W
Ko
4.00±0.1
8.00±0.1
2.00±0.1
0.40±0.1
16.00±0.3
4.60±0.1
4.00±0.1
8.00±0.1
2.00±0.1
0.40±0.1
24.00±0.3
4.00±0.1
11
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
Precautions for Use
1. Soldering Condition
1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile
Note:
Reference: IPC/JEDEC J-STD-020D
Preheat
Temperature min (Tsmin)
150 °C
Temperature max (Tsmax)
200°C
Time (Tsmin to Tsmax) (ts)
60-120 seconds
Average ramp-up rate (Tsmax to Tp)
3 °C/second max
Other
Liquidus Temperature (TL)
217 °C
Time above Liquidus Temperature (t L)
60-100 sec
Peak Temperature (TP)
260°C
Time within 5 °C of Actual Peak Temperature: T P - 5°C
30 s
Ramp- Down Rate from Peak Temperature
6°C /second max.
Time 25°C to peak temperature
8 minutes max.
Reflow times
3 times
12
GX817
深圳市国芯佳品半导体有限公司
Guo Xin Jia Pin SEMICONDUTOR
GX817
DISCLAIMER
1.
Above specification may be changed without notice. GXJP will reserve authority on material change for
above specification.
2.
The graphs shown in this datasheet are representing typical data only and do not show guaranteed values.
3.
When using this product, please observe the absolute maximum ratings and the instructions for use outlined in
these specification sheets. GXJP assumes no responsibility for any damage resulting from use of the
product which does not comply with the absolute maximum ratings and the instructions included in these
specification sheets.
4.
These specification sheets include materials protected under copyright of GXJP. Reproduction in any
form is prohibited without the specific consent of GXJP.
5.
This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or life saving
applications or any other application which can result in human injury or death. Please contact authorized
GXJP sales agent for special application request.
6.
Statements regarding the suitability of products for certain types of applications are based on GXJP
knowledge of typical requirements that are often placed on GXJP products in generic applications. Such
statements are not binding statements about the suitability of products for a particular application. It is the
customer’s responsibility to validate that a particular product with the properties described in the product
specification is suitable for use in a particular application. Parameters provided in datasheets and/or
specifications may vary in different applications and performance may vary over time. All operating parameters,
including typical parameters, must be validated for each customer application by the customer’s technical
experts. Product specifications do not expand or otherwise modify GXJP terms and conditions of purchase,
including but not limited to the warranty expressed therein.
13
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