GX817B-S

深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR GX817 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER GX817 Series Schematic Features: • Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Compact small outline package •The product itself will remain within RoHS compliant version • Compliance with EU REACH • UL and cUL approved(No.E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CQC approved Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Description The GX817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. Applications • Programmable controllers • System appliances, measuring instruments • Telecommunication equipments • Home appliances, such as fan heaters, etc. • Signal transmission between circuits of different potentials and impedances 1 深圳市国芯佳品半导体有限公司 GX817 Guo Xin Jia Pin SEMICONDUTOR Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Unit Forward current IF 60 mA Peak forward current (1us, pulse) IFP 1 A Reverse voltage VR 6 V 100 mW 2.9 mW/°C 150 mW 5.8 mW/°C IC 50 mA Collector-Emitter voltage VCEO 35 V Emitter-Collector voltage VECO 6 V PTOT 200 mW Isolation Voltage* VISO 5000 V rms Operating Temperature TOPR -55 to 110 °C Storage Temperature TSTG -55 to 125 °C TSOL 260 °C Input Power dissipation PD Derating factor (above Ta = 100°C) Power dissipation PC Derating factor (above Ta = 100°C) Output Collector current Total Power Dissipation 1 2 Soldering Temperature* Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 seconds 2　 深圳市国芯佳品半导体有限公司 GX817 Guo Xin Jia Pin SEMICONDUTOR Electro-Optical Characteristics (Ta=25℃ unless specified otherwise) Input Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF - 1.2 1.4 V IF = 20mA Reverse Current Input capacitance IR - 30 10 250 µA pF VR = 4V V = 0, f = 1kHz Symbol Min Typ. Max. Unit Condition ICEO - - 100 nA VCE = 20V, IF = 0mA BVCEO 35 - - V IC = 0.1mA BVECO 6 - - V IE = 0.1mA Symbol Min Typ. Max. Unit Condition GX817 50 - 600 GX817A 80 - 160 GX817B 130 - 260 200 - 400 % IF = 5mA ,VCE = 5V GX817D 300 - 600 GX817X 100 - 200 GX817Y 150 - 300 - 0.1 0.2 V IF = 20mA ,IC = 1mA - -  VIO = 500Vdc, 40~60% R.H. Cin Output Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Transfer Characteristics Parameter Current Transfer ratio CTR GX817C Collector-Emitter saturation voltage VCE(sat) RIO Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz Cut-off frequency fc - 80 - kHz VCE = 5V, IC = 2mA RL = 100, -3dB Rise time tr - - 18 µs tf - - 18 µs Fall time 5×10 10 Isolation resistance * Typical values at Ta = 25°C 3 VCE = 2V, IC = 2mA, RL = 100 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR Typical Electro-Optical Characteristics Curves 4 GX817 深圳市国芯佳品半导体有限公司 GX817 Guo Xin Jia Pin SEMICONDUTOR VCC IF IC Input Pulse RL Output Input 10% Output Pulse RIN tr ton Figure 7. Switching Time Test Circuit & Waveforms 5 90% tf toff 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR GX817 Order Information Part Number GX817X (Y)(Z)-FV Note X Y Z F V = Lead form option (S1, S2, M or none) = CTR Rank (A, B, C, D, X , Y or none) = Tape and reel option (TU, TD or none) = Lead frame option (F: Iron, None: copper) = VDE safety (optional) Option Description Packing quantity None Standard DIP-4 100 units per tube M Wide lead bend (0.4 inch spacing) 100 units per tube S1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reel S1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel S2 (TU) Surface mount lead form (low profile) + TU tape & reel option 2000 units per reel S2 (TD) Surface mount lead form (low profile) + TD tape & reel option 2000 units per reel 6 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR Package Dimension (Dimensions in mm) Standard DIP Type Option M Type 7 GX817 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR Option S1 Type Option S2 Type 8 GX817 深圳市国芯佳品半导体有限公司 GX817 Guo Xin Jia Pin SEMICONDUTOR Recommended pad layout for surface mount leadform For S1 option For S2 option Notes Suggested pad dimension is just for reference only. Please modify the pad dimension based on individual need. 9 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR Device Marking EL 817 FRYWWV Notes 817 F R Y WW V denotes Device Number denotes Factory Code (G: China and Green part) denotes CTR Rank (A, B, C, D , X , Y or none) denotes 1 digit Year code denotes 2 digit Week code denotes VDE (optional) 10 GX817 深圳市国芯佳品半导体有限公司 GX817 Guo Xin Jia Pin SEMICONDUTOR Tape & Reel Packing Specifications Option TD Option TU Direction of feed from reel Direction of feed from reel Tape dimensions Dimension No. Dimension (mm) S1 Dimension (mm) S2 Dimension No. Dimension (mm) S1 Dimension (mm) S2 Ao Bo Do D1 E F 4.90±0.1 10.40±0.1 1.5±0.1 1.50±0.1 1.75±0.1 7.50±0.1 4.88±0.1 12.55±0.1 1.5±0.1 1.50±0.1 1.75±0.1 11.5±0.1 Po P1 P2 t W Ko 4.00±0.1 8.00±0.1 2.00±0.1 0.40±0.1 16.00±0.3 4.60±0.1 4.00±0.1 8.00±0.1 2.00±0.1 0.40±0.1 24.00±0.3 4.00±0.1 11　 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR Precautions for Use 1. Soldering Condition 1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile Note: Reference: IPC/JEDEC J-STD-020D Preheat Temperature min (Tsmin) 150 °C Temperature max (Tsmax) 200°C Time (Tsmin to Tsmax) (ts) 60-120 seconds Average ramp-up rate (Tsmax to Tp) 3 °C/second max Other Liquidus Temperature (TL) 217 °C Time above Liquidus Temperature (t L) 60-100 sec Peak Temperature (TP) 260°C Time within 5 °C of Actual Peak Temperature: T P - 5°C 30 s Ramp- Down Rate from Peak Temperature 6°C /second max. Time 25°C to peak temperature 8 minutes max. Reflow times 3 times 12 　 GX817 深圳市国芯佳品半导体有限公司 Guo Xin Jia Pin SEMICONDUTOR GX817 DISCLAIMER 1. Above specification may be changed without notice. GXJP will reserve authority on material change for above specification. 2. The graphs shown in this datasheet are representing typical data only and do not show guaranteed values. 3. When using this product, please observe the absolute maximum ratings and the instructions for use outlined in these specification sheets. GXJP assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 4. These specification sheets include materials protected under copyright of GXJP. Reproduction in any form is prohibited without the specific consent of GXJP. 5. This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or life saving applications or any other application which can result in human injury or death. Please contact authorized GXJP sales agent for special application request. 6. Statements regarding the suitability of products for certain types of applications are based on GXJP knowledge of typical requirements that are often placed on GXJP products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify GXJP terms and conditions of purchase, including but not limited to the warranty expressed therein. 13