2SC1815

2SC1815 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60Volts POWER 200mWatts FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V. Ÿ Collector current IC=0.15A. Ÿ Transition frequency f T >80MHz @ Ÿ IC=1mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC Ÿ directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:HF 3 C HF B 2 1 E MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 0.15 A IC Collector Current PC Total Device Dissipation RθJA 0.2 W O Thermal Resistance Form Junction to Ambient 625 C/W TJ Junction Temperature 150 O TSTG Storage Temperature -55~+150 O C C 2SC1815 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min. Typ.Max.Units IC=100uA,IE=0 60 V Collector-Emitter breakdown voltage V (BR)CEO IC=1mA,IB=0 50 V Emitter-Base breakdown voltage V (BR)EBO IE=100uA,IC=0 5 V Collector cut-off current ICBO V CB=60V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO V EB=5V,IC=0 HFE IC=0.1mA,V CE=5V 40 HFE IC=1.0mA,V CE=5V 70 HFE IC=1mA,V CE=5V 130 HFE IC=50mA,V CE=5V 60 HFE IC=100mA,V CE=1.0V 30 DC current gain* V (BR)CBO Test Condition Collector-Emitter saturation voltage V CE(SAT) V CE=55V,IB=0 0.1 uA 0.1 uA 0.1 uA 0.1 uA 400 IC=20mA,IB=1mA 0.2 V IC=100mA,IB=10mA 0.3 V IC=20mA,IB=1mA 0.85 V IC=100mA,IB=10mA 0.95 V Base-Emitter Saturation voltage* V BE(SAT) Input capacitance C IB V CB=5V,IE=0,f=1MHZ 4.0 pF Output capacitance C OB V EB=0.5V,IC=0,f=1MHZ 8.0 pF Transition ferquency fT IC=1mA,V CE=10V,f=30MHZ Delay time td Rise time tr V CC=3V,V BE=-0.5V, IC=10mA,IB=1.0mA Storage time ts Fall time tf V CC=3V,V BE=-0.5V, IB1=IB2=1.0mA 80 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width