ZMM5V6-MS

ZMM2V0-MS THRU ZMM75-MS Semiconductor Compiance Silicon Epitaxial Planar Zener Diodes in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E24 standard. Smaller voltage tolerances and higher Zener voltages are upon request. LL-34 REEL SPECIFICATION P/N ZMM2V0-MS THRU ZMM75-MS PKG QTY LL34 2500 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range 1) Value Unit Ptot 500 1) mW Tj 175 O C Tstg - 55 to + 175 O C Symbol Max. Valid provided that electrodes are kept at ambient temperature Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Symbol RthA VF 0.3 1 1) Unit K/mW V Valid provided that electrodes are kept at ambient temperature www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Characteristics at Ta = 25 OC Zener Voltage Range 1) P/N VZno Dynamic Resistance Reverse Leakage Current Compiance Temp. Coefficient of Zener Voltage VZT at lZT ZZT ZZK at IZK Ta = 25 OC Ta = 125 oC at VR (V) (V) (mA) Max. (Ω) Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K) ZMM2V0-MS ZMM2V2-MS ZMM2V4-MS ZMM2V7-MS 2.0 2.2 2.4 2.7 1.8...2.15 2.08...2.33 2.28...2.56 2.5...2.9 5 5 5 5 85 85 85 85 600 600 600 600 1 1 1 1 100 75 50 10 200 160 100 50 1 1 1 1 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 ZMM3V0-MS ZMM3V3-MS ZMM3V6-MS ZMM3V9-MS ZMM4V3-MS ZMM4V7-MS ZMM5V1-MS ZMM5V6-MS ZMM6V2-MS ZMM6V8-MS ZMM7V5-MS ZMM8V2-MS ZMM9V1-MS ZMM10-MS ZMM11-MS ZMM12-MS ZMM13-MS ZMM15-MS ZMM16-MS ZMM18-MS ZMM20-MS ZMM22-MS ZMM24-MS ZMM27-MS ZMM30-MS ZMM33-MS ZMM36-MS ZMM39-MS ZMM43-MS ZMM47-MS ZMM51-MS ZMM56-MS ZMM62-MS ZMM68-MS ZMM75-MS 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 125 135 150 200 250 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 500 600 700 700 1000 1000 1000 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 40 40 40 40 20 10 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 5 5 5 10 10 10 10 10 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.02 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 m 1) 2) Tested with pulses tp = 20 ms. The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode electrode to the negative pole. www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Compiance Breakdown characteristics Tj = constant (pulsed) mA 50 ZMM... Tj=25o C ZMM 2.7 ZMM 1 Iz ZMM 3.9 ZMM 3.3 ZMM 6.8 ZMM 4.7 40 ZMM 8.2 ZMM 5.6 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 7 8 10 V 9 Vz Breakdown characteristics Tj = constant (pulsed) mA 30 ZMM... Tj=25o C ZMM 10 ZMM 12 Iz ZMM 15 20 ZMM 18 ZMM 22 ZMM 27 Test current Iz 5mA 10 ZMM 33 ZMM 36 0 0 10 20 30 40 V Vz www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Compiance Breakdown characteristics Tj = constant (pulsed) ZMM... mA 10 Iz Tj=25o C ZMM 39 ZMM 51 ZMM 43 ZMM 47 8 Test current Iz 5mA 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 V Vz Admissible power dissipation versus ambient temperature Forward characteristics Valid provided that electrodes are kept at ambient temperature. mA 10 ZMM... mW 500 ZMM... 3 102 iF Ptot 400 10 o Tj=100 C 1 Tj=25 -1 10 10 300 o C 200 -2 -3 10 100 10-4 10-5 0 0 0.2 0.4 0.6 0.8 VF 1V 0 200o C 100 Tamb www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Valid provided that the electrodes are kept at ambient temperature. K/W 10 ZMM... 3 ZMM... 1000 o Tj=25 C 7 5 5 4 rthA rzj 3 2 2 7 5 5 4 0.1 3 3 0.05 2 2 0.02 10 3 100 0.2 4 4 2 0.5 10 0.01 10 2.7 ZMM1 V=0 7 3.6 4.7 5 5 4 tp 4 3 tp V= 3 PI T 2 10-5 10-4 10-3 -2 10 10 tp 0.1 10 S 1 2 5 1 2 5 10 Dynamic resistance versus Zener current ZMM... 100 ZMM... o Tj=25 C o Tj=25 C 7 rzj 4 5 4 3 VR=1V 3 33 2 VR =2V 27 22 10 100 7 VR =2V 4 18 15 5 4 VR=1V 5 12 3 3 10 2 6.8/8.2 ZMM6.2 2 1 10 1 2345 10 100mA 5 2 Iz 5 2 ZMM5.6 1 -1 Capacitance versus Zener voltage pF 1000 5.1 2 T 1 Ctot Compiance 2345 0.1 2 5 1 2 5 10 2 5 100mA 100V Vz at Iz=5 mA Iz www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener current 10 Valid provided that electrodes are kept at ambient temperature ZMM... 3 10 Tj=25o C 7 ZMM... 3 rzth=RthA.Vz. 5 Vz Tj 4 5 3 4 rzj Compiance 2 3 2 10 rzth 10 5 4 2 3 7 47+51 43 39 5 4 2 10 ZMM36 3 5 4 3 2 10 2 negative positive 2 0.1 1 4 5 23 2 3 10mA 4 5 1 2345 1 Iz 2345 10 100V Vz at Iz=5 mA Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage mV/K ZMM... 100 ZMM... 25 7 5 rzj Vz Tj 4 3 20 5mA Iz=1mA 20mA 15 2 10 10 7 5 5 4 3 0 2 Tj=25 C Iz=5 mA o 1 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA -5 1 23 45 10 23 45 100V Vz at Iz=5 mA www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Temperature dependence of Zener voltage versus Zener voltage mV/K Change of Zener voltage versus junction temperature V ZMM... 100 Compiance ZMM... 9 Iz=5 mA 8 80 Vz bei Iz=5mA 7 Vz Tj Vz 60 51V 6 43V 5 36V 4 40 3 2 1 20 0 Iz=5 mA -1 0 0 20 40 60 80 0 100V 20 40 60 o 80 100 120 140 C Vz at Iz=5 mA Tj Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage Change of Zener voltage versus junction temperature V ZMM... 0.8 25 X) Vz=35 V 0.7 V 1.6 15 1.4 10 0.6 Vz ZMM... Vz=rzth.Iz Iz=5 mA 1.2 Vz 0.5 1 8 0.4 7 0.3 6.2 0.2 5.9 0.1 5.6 0 5.1 -0.1 X) at Iz=5 mA -0.2 0 20 40 60 80 1 3.6 4.7 o 100 120 140 C 0.8 0.6 0.4 0.2 0 -0.2 -0.4 1 2 3 4 5 10 2 3 4 5 100V Tj Vz at Iz=5 mA www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Compiance Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage V ZMM... 5 Vz=rzth.Iz 4 Vz 3 Iz=5 mA 2 1 0 Iz=2 mA 0 20 40 60 80 100V Vz at Iz=5 mA www.msksemi.com ZMM2V0-MS THRU ZMM75-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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