LTC358H
P-1
General Description
The LTC358H is a general purpose, low positive offset (+1.0 to +2.5 mV), high frequency
response and micro-power dual operational amplifier. With an excellent bandwidth of
1MHz, a slew rate of 1V/μs, and a quiescent current of 95μA per amplifier at 5V, the
LTC358H can be designed into a wide range of applications.
The LTC358H op-amp is designed to provide optimal performance in low voltage and low
power systems. The input common-mode voltage range includes true ground, and with
low positive input offset voltage of +1.0 to +2.5mV. This part provides rail-to-rail output
swing into heavy loads. The LTC358H op-amp is specified for single or dual power
supplies of 1.8V to 5.5V. All models are specified over the extended industrial
temperature range of −40℃ to +125℃.
The LTC358H is available in both 8-lead SOIC and MSOP packages.
Features and Benefits
General Purpose 1 MHz Amplifiers, Low Cost
High Slew Rate: 1 V/μs
Low Positive Offset Voltage: +1.0 to 2.5 mV
Low Power: 95 μA per Amplifier Supply Current
Settling Time to 0.1% with 2V Step: 1.2 μs
Unit Gain Stable
Rail-to-Rail Input and Output
– Input Voltage Range: -0.1 to +5.1 V at 5V Supply
Operating Power Supply: +1.8 V to +5.5 V
Operating Temperature Range: −40 ℃ to +125 ℃
ESD Rating: HBM – 5 kV, CDM – 2 kV
Upgrade to LMV358 Op-amp
Smoke/Gas/Environment Sensors
Audio Outputs
Battery and Power Supply Control
Portable Equipments and Mobile Devices
Active Filters
Sensor Interfaces
Battery-Powered Instrumentation
Medical instrumentation
Applications
Pin Configurations (Top View)
LTC358H
SOIC-8L / MSOP8L
OUT A
1
﹣IN A
2
﹢IN A
3
﹣VS
4
A
B
8
﹢VS
7
OUT B
6
﹣IN B
5
﹢IN B
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-2
Pin Description
Symbol
Description
–IN
Inverting input of the amplifier. The voltage range can go from (VS– – 0.1V) to (VS+ +
0.1V).
+IN
Non-inverting input of the amplifier. This pin has the same voltage range as –IN.
+VS
Positive power supply. The voltage is from 1.8V to 5.5V. Split supplies are possible as
long as the voltage between VS+ and VS– is between 1.8V and 5.5V. A bypass capacitor
of 0.1μF as close to the part as possible should be used between power supply pins or
between supply pins and ground.
–VS
Negative power supply. It is normally tied to ground. It can also be tied to a voltage
other than ground as long as the voltage between VS+ and VS– is from 1.8V to 5.5V. If it
is not connected to ground, bypass it with a capacitor of 0.1μF as close to the part as
possible.
OUT
Amplifier output.
Ordering Information
Type Number
Package Name
Package Quantity
Marking Code (1)
LTC358HXS8/R8
SO-8
Tape and Reel, 4 000
358 T, AG2IX
LTC358HXV8/R6
MSOP-8
Tape and Reel, 3 000
358T, AG2I
(1) There may be multiple device markings, a varied marking character of “x” , or additional marking, which relates to the
logo, the lot trace code information, or the environmental category on the device.
Limiting Value
In accordance with the Absolute Maximum Rating System (IEC 60134).
Parameter
Absolute Maximum Rating
Supply Voltage, VS+ to VS–
10.0 V
Signal Input Terminals: Voltage, Current
VS– – 0.3 V to VS+ + 0.3 V, ±10 mA
Output Short-Circuit
Continuous
Storage Temperature Range, Tstg
–65 ℃ to +150 ℃
Junction Temperature, TJ
150 ℃
Lead Temperature Range (Soldering 10 sec)
260 ℃
ESD Rating
Parameter
Electrostatic
Discharge
Voltage
Item
Value
Human body model (HBM), per MIL-STD-883J / Method 3015.9 (1)
±5 000
Charged device model (CDM), per ESDA/JEDEC JS-002-2014
±2 000
Machine model (MM), per JESD22-A115C
(2)
Unit
V
±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
Manufacturing with less than 500-V HBM is possible if necessary precautions are taken.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Manufacturing with less than 250-V CDM is possible if necessary precautions are taken.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-3
Electrical Characteristics
VS = 5.0V, TA = +25℃, VCM = VS /2, VO = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
+1.6
+2.5
mV
INPUT CHARACTERISTICS
VOS
Input offset voltage
+1.0
VOS TC
Offset voltage drift
over Temperature
IB
Input bias current
TA = +85 ℃
150
TA = +125 ℃
500
μV/℃
2
1
IOS
Input offset current
VCM
Common-mode
voltage range
CMRR
Common-mode
rejection ratio
AVOL
Open-loop voltage
gain
RIN
Input resistance
CIN
Input capacitance
pA
5
VS––0.1
VS = 5.5 V, VCM = −0.1 to 5.6 V
80
VCM = 0 to 5.3 V, TA = −40 to +125 ℃
70
VS = 2.0 V, VCM = −0.1 to 2.1 V
74
VCM = 0 to 1.8 V, TA = −40 to +125 ℃
65
RL = 10 kΩ, VO = 0.05 to 3.5 V
90
TA = −40 to +125 ℃
85
pA
VS++0.1
V
96
dB
88
105
dB
100
GΩ
Differential
2.0
Common mode
3.5
pF
OUTPUT CHARACTERISTICS
VOH
VOL
ZOUT
ISC
High output voltage
swing
Low output voltage
swing
Closed-loop output
impedance
Open-loop output
impedance
Short-circuit current
RL = 10 kΩ
RL = 10 kΩ
VS+–19
VS+–11
VS–+8
f = 200kHz, G = +1
0.4
f = 1MHz, IO = 0
2.6
Source current through 10Ω
45
Sink current through 10Ω
55
mV
VS–+14
mV
Ω
mA
DYNAMIC PERFORMANCE
ΦM
Gain bandwidth
product
Phase margin
SR
Slew rate
tS
Settling time
GBW
tOR
THD+N
Overload recovery
time
Total harmonic
distortion + noise
f = 1kHz
1
MHz
CL = 100pF
G = +1, CL = 100pF, VO = 1.5V to
3.5V
To 0.1%, G = +1, 2V step
66
°
1.0
V/μs
To 0.01%, G = +1, 2V step
1.5
VIN * Gain > VS
2
μs
0.002
%
f = 1kHz, G = +1, VO = 3VPP
1.2
μs
NOISE PERFORMANCE
Vn
Input voltage noise
f = 0.1 to 10 Hz
6
μVP-P
en
Input voltage noise
density
f = 1kHz
30
nV/√Hz
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-4
Electrical Characteristics (continued)
VS = 5.0V, TA = +25℃, VCM = VS /2, VO = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃.
Symbol
In
Parameter
Input current noise
density
Conditions
Min.
f = 10kHz
Typ.
Max.
Unit
fA/√Hz
10
POWER SUPPLY
VS
Operating supply
voltage
PSRR
Power supply
rejection ratio
IQ
Quiescent current
(per amplifier)
1.8
VS = 2.0 to 5.5 V, VCM < VS+ − 2V
80
TA = −40 to +125 ℃
75
5.5
106
95
TA = −40 to +125 ℃
V
dB
135
170
μA
THERMAL CHARACTERISTICS
TA
Operating
temperature range
θJA
Package Thermal
Resistance
-40
+125
SOIC-8L
125
MSOP-8L
216
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
℃
℃/W
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-5
Typical Performance Characteristics
At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
AOL (dB)
80
60
40
20
0
-20
-40
10
100
1k
10k
100k
1M
140
120
100
CMRR (dB)
100
140
120
100
80
60
40
20
0
-20
-40
-60
-80
10M
Phase (deg)
120
80
60
40
20
0
1
100
Frequency (Hz)
Common-mode Rejection Ratio as a function of
Frequency.
1,000
120
Voltage Noise (nV/√Hz)
100
PSRR (dB)
1M
Frequency (Hz)
Open-loop Gain and Phase as a function of
Frequency.
100
80
60
40
20
0
10
1
1
100
10k
1M
1
100
Frequency (Hz)
10k
1M
Frequency (Hz)
Power Supply Rejection Ratio as a function of
Frequency.
Input Voltage Noise Spectral Density as a function of
Frequency.
150
Quiescent Current (μA)
150
Quiescent Current (μA)
10k
120
90
60
30
120
90
60
30
0
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-50
0
25
50
75
100
125
Temperature (℃)
Supply Voltage (V)
Quiescent Current as a function of Supply Voltage.
-25
Quiescent Current as a function of Temperature.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-6
Typical Performance Characteristics (continued)
At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
CL=100pF
1V/div
25mV/div
CL=100pF
2μs/div
5μs/div
Large Signal Step Response.
Small Signal Step Response.
60
Short-circuit Current (mA)
Short-circuit Current (mA)
80
60
–ISC
40
20
+ISC
0
–ISC
50
40
+ISC
30
20
2
2.5
3
3.5
4
4.5
5
5.5
-50
-25
25
50
75
100
125
Temperature (℃)
Supply Voltage (V)
Short-circuit Current as a function of Supply
Voltage.
Short-circuit Current as a function of Temperature.
5
140
Sourcing Current
–40℃
3
125℃
25℃
2
1
Sinking Current
0
0
10
20
30
40
50
60
70
120
Channel Separation(dB)
4
Output Voltage (V)
0
100
80
60
40
20
0
10
Output Current (mA)
Output Voltage Swing as a function of Output
Current.
100
1k
10k
100k
1M
10M
Frequency (Hz)
Channel Separation as a function of Frequency.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-7
Application Notes
LOW INPUT BIAS CURRENT
The LTC358H device is a CMOS op-amp and features very
low input bias current in pA range. The low input bias
current allows the amplifiers to be used in applications
with high resistance sources. Care must be taken to
minimize PCB Surface Leakage. See below section on “PCB
Surface Leakage” for more details.
resistive loads (e.g. 100kΩ), the output voltage can typically
swing to within 5mV from the supply rails. Different load
conditions change the ability of the amplifier to swing close
to the rails. For resistive loads up to 10-kΩ, the output
swings typically to within 11-mV of the positive supply rail
and within 8-mV of the negative supply rail.
6.0
PCB SURFACE LEAKAGE
Guard
Ring
+IN
–IN
+VS
Figure 1. Use a guard ring around sensitive pins
5.0
AMPLITUDE (V)
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects need to
be considered. Surface leakage is caused by humidity, dust
or other contamination on the board. Under low humidity
conditions, a typical resistance between nearby traces is
1012Ω. A 5V difference would cause 5pA of current to flow,
which is greater than the LTC358H’s input bias current at
+25℃ (±1fA, typical). It is recommended to use multi-layer
PCB layout and route the op-amp’s –IN and +IN signal
under the PCB surface.
The effective way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard ring
is biased at the same voltage as the sensitive pin. An
example of this type of layout is shown in Figure 1 for
Inverting Gain application.
1. For Non-Inverting Gain and Unity-Gain Buffer:
a) Connect the non-inverting pin (+IN) to the input
with a wire that does not touch the PCB surface.
b) Connect the guard ring to the inverting input pin
(–IN). This biases the guard ring to the Common
Mode input voltage.
2. For Inverting Gain and Trans-impedance Gain Amplifiers
(convert current to voltage, such as photo detectors):
a) Connect the guard ring to the non-inverting input
pin (+IN). This biases the guard ring to the same
reference voltage as the op-amp (e.g., VS/2 or
ground).
b) Connect the inverting pin (–IN) to the input with a
wire that does not touch the PCB surface.
4.0
3.0
2.0
1.0
0.0
-1.0
0
10
20
30
40
50
60
TIME (ms)
Figure 2. No Phase Inversion with Inputs Greater Than the
Power-Supply Voltage
The maximum output current is a function of total supply
voltage. As the supply voltage to the amplifier increases,
the output current capability also increases. Attention must
be paid to keep the junction temperature of the IC below
150℃ when the output is in continuous short-circuit. The
output of the amplifier has reverse-biased ESD diodes
connected to each supply. The output should not be forced
more than 0.5V beyond either supply, otherwise current will
flow through these diodes.
CAPACITIVE LOAD AND STABILITY
The LTC358H op-amp can directly drive 500pF in unity-gain
without oscillation. The unity-gain follower (buffer) is the
most sensitive configuration to capacitive loading. Direct
capacitive loading reduces the phase margin of amplifiers
and this results in ringing or even oscillation. Applications
that require greater capacitive drive capability should use
an isolation resistor between the output and the capacitive
load like the circuit in Figure 3. The isolation resistor RISO
and the load capacitor CL form a zero to increase stability.
The bigger the RISO resistor value, the more stable VOUT will
be. Note that this method results in a loss of gain accuracy
because RISO forms a voltage divider with the RL.
GROUND SENSING AND RAIL TO RAIL
The input common-mode voltage range of the LTC358H opamp extends 100mV beyond the supply rails. This is
achieved with a complementary input stage—an N-channel
input differential pair in parallel with a P-channel
differential pair. For normal operation, inputs should be
limited to this range. The absolute maximum input voltage
is 500mV beyond the supplies. Inputs greater than the input
common-mode range but less than the maximum input
voltage, while not valid, will not cause any damage to the
op-amp. Unlike some other op-amps, if input current is
limited, the inputs may go beyond the supplies without
phase inversion, as shown in Figure 2. Since the input
common-mode range extends from (VS− − 0.1V) to (VS+ +
0.1V), the LTC358H op-amp can easily perform ‘true ground’
sensing.
A topology of class AB output stage with common-source
transistors is used to achieve rail-to-rail output. For light
RISO
VOUT
VIN
CL
Figure 3. Indirectly Driving Heavy Capacitive Load
An improvement circuit is shown in Figure 4. It provides DC
accuracy as well as AC stability. The RF provides the DC
accuracy by connecting the inverting signal with the output.
The CF and RISO serve to counteract the loss of phase
margin by feeding the high frequency component of the
output signal back to the amplifier’s inverting input, thereby
preserving phase margin in the overall feedback loop.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-8
Application Notes (continued)
CF
RF
RISO
VOUT
VIN
CL
RL
Figure 4. Indirectly Driving Heavy Capacitive Load with DC
Accuracy
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s
gain, or (b) by placing a capacitor in parallel with the
feedback resistor to counteract the parasitic capacitance
associated with inverting node.
POWER SUPPLY LAYOUT AND BYPASS
The LTC358H op-amp operates from either a single +1.8V to
+5.5V supply or dual ±0.9V to ±2.75V supplies. For singlesupply operation, bypass the power supply VS with a
ceramic capacitor (i.e. 0.01μF to 0.1μF) which should be
placed close (within 2mm for good high frequency
performance) to the VS pin. For dual-supply operation, both
the VS+ and the VS– supplies should be bypassed to ground
with separate 0.1μF ceramic capacitors. A bulk capacitor
(i.e. 2.2μF or larger tantalum capacitor) within 100mm to
provide large, slow currents and better performance. This
bulk capacitor can be shared with other analog parts.
Good PC board layout techniques optimize performance by
decreasing the amount of stray capacitance at the op-amp’s
inputs and output. To decrease stray capacitance, minimize
trace lengths and widths by placing external components
as close to the device as possible. Use surface-mount
components whenever possible. For the op-amp, soldering
the part to the board directly is strongly recommended. Try
to keep the high frequency big current loop area small to
minimize the EMI (electromagnetic interfacing).
GROUNDING
A ground plane layer is important for the LTC358H circuit
design. The length of the current path speed currents in an
inductive ground return will create an unwanted voltage
noise. Broad ground plane areas will reduce the parasitic
inductance.
INPUT-TO-OUTPUT COUPLING
To minimize capacitive coupling, the input and output signal
traces should not be parallel. This helps reduce unwanted
positive feedback.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-9
Typical Application Circuits
The LTC358H op-amp has input bias current in the pA
range. This is ideal in buffering high impedance chemical
sensors, such as pH probes. As an example, the circuit in
Figure 7 eliminates expansive low-leakage cables that that
is required to connect a pH probe (general purpose
combination pH probes, e.g Corning 476540) to metering
ICs such as ADC, AFE and/or MCU. A LTC358H op-amp and
a lithium battery are housed in the probe assembly. A
conventional low-cost coaxial cable can be used to carry
the op-amp’s output signal to subsequent ICs for pH
reading.
DIFFERENTIAL AMPLIFIER
R2
R1
Vn
VOUT
Vp
R3
R4
VREF
SHUNT-BASED CURRENT SENSING AMPLIFIER
Figure 5. Differential Amplifier
The circuit shown in Figure 5 performs the difference
function. If the resistors ratios are equal R4/R3 = R2/R1, then:
VOUT = (Vp – Vn) × R2/R1 + VREF
INSTRUMENTATION AMPLIFIER
RG
VREF
R1
R2
R2
R1
VOUT
V1
V2
VOUT =(V1 V2 )(1
R1 2 R1
) VREF
R2 RG
Figure 6. Instrumentation Amplifier
The LTC358H op-amp is well suited for conditioning sensor
signals in battery-powered applications. Figure 6 shows a
two op-amp instrumentation amplifier, using the LTC358H
op-amp. The circuit works well for applications requiring
rejection of common-mode noise at higher gains. The
reference voltage (VREF) is supplied by a low-impedance
source. In single voltage supply applications, the VREF is
typically VS/2.
The current sensing amplification shown in Figure 8 has a
slew rate of 2πfVPP for the output of sine wave signal, and
has a slew rate of 2fVPP for the output of triangular wave
signal. In most of motor control systems, the PWM
frequency is at 10kHz to 20kHz, and one cycle time is 100μs
for a 10kHz of PWM frequency. In current shunt monitoring
for a motor phase, the phase current is converted to a
phase voltage signal for ADC sampling. This sampling
voltage signal must be settled before entering the ADC. As
the Figure 8 shown, the total settling time of a current
shunt monitor circuit includes: the rising edge delay time
(tSR) due to the op-amp’s slew rate, and the measurement
settling time (tSET). For a 3-shunt solution in motor phase
current sensing, if the smaller duty cycle of the PWM is
defined at 45% (In fact, the phase with minimum PWM duty
cycle, such as 5%, is not detected current directly, and it
can be calculated from the other two phase currents), and
the tSR is required at 20% of a total time window for a phase
current monitoring, in case of a 3.3V motor control system
(3.3V MCU with 12-bit ADC), the op-amp’s slew rate should
be more than:
3.3V / (100μs× 45% × 20%) = 0.37 V/μs
At the same time, the op-amp’s bandwidth should be much
greater than the PWM frequency, like 10 time at least.
tSR
VBUS
tSET
BUFFERED CHEMICAL SENSORS
High side
switch
R1
10MΩ
3V
To ADC,
AFE or MCU
VM
Low side
switch
R2
pH
PROBE
R1
RSHUNT
R2
10MΩ
tSR – Time delay due to op-amp slew rate
tSET – Measurement settling time
tSMP – Sampling time window
To Motor Phase
Coax
tSMP
C1
To MCU
ADC pin
R3
R4
R5
C2
All components contained within the pH probe
Filter
Figure 7. Buffered pH Probe
Offset
Amplification
Figure 8. Current Shunt Monitor Circuit
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-10
Package Outlines
DIMENSIONS, SOIC-8L
A2
A
A1
D
b
Symbol
e
A
A1
A2
b
C
D
E
E1
e
L
θ
L
E
E1
θ
Dimensions
In Millimeters
Min
Max
1.370
1.670
0.070
0.170
1.300
1.500
0.306
0.506
0.203 TYP.
4.700
5.100
3.820
4.020
5.800
6.200
1.270 TYP.
0.450
0.750
0°
8°
Dimensions
In Inches
Min
Max
0.054
0.066
0.003
0.007
0.051
0.059
0.012
0.020
0.008 TYP.
0.185
0.201
0.150
0.158
0.228
0.244
0.050 TYP.
0.018
0.030
0°
8°
C
RECOMMENDED SOLDERING FOOTPRINT, SOIC-8L
8X
5.40
0.213
(1.55)
MAX
(0.061)
(3.90)
MIN
(0.154)
1
(0.60)
MAX 8X
(0.024)
PITCH
1.270
0.050
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
mm
( inches
)
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
LTC358H
P-11
Package Outlines (continued)
DIMENSIONS, MSOP-8L
A2
A
A1
D
b
Symbol
e
A
A1
A2
b
C
D
E
E1
e
L
θ
L
E1
E
Dimensions
In Millimeters
Min
Max
0.800
1.100
Dimensions
In Inches
Min
Max
0.031
0.043
0.050
0.150
0.750
0.950
0.290
0.380
0.150
0.200
2.900
3.100
2.900
3.100
4.700
5.100
0.650 TYP.
0.400
0.700
0°
8°
0.002
0.006
0.030
0.037
0.011
0.015
0.006
0.008
0.114
0.122
0.114
0.122
0.185
0.201
0.026 TYP.
0.016
0.028
0°
8°
θ
C
RECOMMENDED SOLDERING FOOTPRINT, MSOP-8L
8X
(0.45)
MAX
(0.018)
(1.45)
MAX
(0.057)
8X
4.40
(5.85)
MAX
0.173
(0.230)
(2.95)
MIN
(0.116)
0.65
PITCH
0.026
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
mm
( inches
)
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
P-12
LTC358H
IMPORTANT NOTICE
Linearin is a global fabless semiconductor company specializing in advanced high-performance highquality analog/mixed-signal IC products and sensor solutions. The company is devoted to the innovation
of high performance, analog-intensive sensor front-end products and modular sensor solutions, applied
in multi-market of medical & wearable devices, smart home, sensing of IoT, and intelligent industrial &
smart factory (industrie 4.0). Linearin’s product families include widely-used standard catalog products,
solution-based application specific standard products (ASSPs) and sensor modules that help customers
achieve faster time-to-market products. Go to http://www.linearin.com for a complete list of Linearin
product families.
For additional product information, or full datasheet, please contact with the Linearin’s Sales Department
or Representatives.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Linearin and designs are registered trademarks of Linearin Technology Corporation.
© Copyright Linearin Technology Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-34.2b — Data Sheet
1MHz General Purpose, RRIO CMOS Amplifiers
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