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1N5822-B

1N5822-B

  • 厂商:

    GOODWORK(固得沃克)

  • 封装:

    DO-27(DO-201AA)

  • 描述:

    3.0A肖特基势垒整流器

  • 数据手册
  • 价格&库存
1N5822-B 数据手册
1N5820 - 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material: UL Flammability Classification Rating 94V-0 · · · · A C D DO-201AD Mechanical Data · · B A Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.1 grams (approx) Mounting Position: Any Marking: Type Number Dim Min Max A 25.40 ¾ B 7.20 9.50 C 1.20 1.30 D 4.80 5.30 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TL = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) @ TL = 75°C Forward Voltage (Note 2) Peak Reverse Current at Rated DC Blocking Voltage (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Notes: Symbol 1N5820 1N5821 1N5822 Unit VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V IO 3.0 A IFSM 80 A @ IF = 3.0A @ IF = 9.4A VFM @ TA = 25°C @ TA = 100°C IRM 2.0 20 RqJA 40 RqJL 10 Tj, TSTG -65 to +125 0.475 0.850 0.500 0.900 0.525 0.950 V mA °C/W °C 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration pulse test used to minimize self-heating effect. 3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad. DS23003 Rev. 7 - 2 1 of 2 www.diodes.com 1N5820-1N5822 ã Diodes Incorporated Single Phase Half-Wave 60 Hz Resistive or Inductive Load 9.5mm Lead Length 3 2 1 0 10 50 100 150 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) 4 30 10 1.0 0.1 0.1 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 0.5 0.7 0.9 1.1 1000 100 Tj = 25ºC f = 1MHz Vsig = 50m Vp-p 80 CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Voltage Characteristics 60 40 20 8.3ms Single Half Sine-Wave JEDEC Method TJ = TJ(max) 0 1 10 100 100 10 0.1 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current DS23003 Rev. 7 - 2 2 of 2 www.diodes.com 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 1N5820-1N5822
1N5822-B 价格&库存

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1N5822-B
  •  国内价格
  • 1+0.25500
  • 100+0.23800
  • 300+0.22100
  • 500+0.20400
  • 2000+0.19550
  • 5000+0.19040

库存:0