2N7002K

www.msksemi.com 2N7002K Semiconductor D SOT-23 Pin Configuration Compiance Features  60V,0.3A, RDS(ON) =2.2Ω@VGS=10V  Improved dv/dt capability D  Fast switching G  Green Device Available S  G-S ESD Protection Diode Embedded  ESD protected up to 2KV G S BVDSS RDSON ID 60V 2.2 0.3A Absolute Maximum Ratings Applications  Motor Drive  Power Tools  LED Lighting Tc=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Sou rce Voltage ±20 V Drain Current – Continuous (TC=25℃) 0.3 A Drain Current – Continuous (TC=100℃) 0.1 A Drain Current – Pulsed1 0.8 A Power Dissipation (TC=25℃) 0.35 W Power Dissipation – Derate above 25℃ 0.003 W/℃ ID IDM PD TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. Max. Unit --- 357 ℃/W www.msksemi.com 2N7002K Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol BVDSS Conditions Parameter Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=125℃ --- --- 10 uA VGS --- --- ±10 uA VGS=10V , ID=0.3A --- 2.2 2.8  VGS=4.5V , ID=0.2A --- 2.4 3.0  = ± 20V , VDS=0V On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.6 2.5 V Forward Transconductance VDS=10V , ID=0.3A --- 0.5 --- S --- 3.7 5.6 --- 0.9 1.4 --- 0.4 0.6 gfs Dynamic and switching Characteristics Qg Qgs Qgd Td(on) Tr Td(off) Total Gate Charge2 , 3 Gate-Source Gate-Drain Charge2 , 3 VDS=30V , VGS=10V , ID=1A Charge2 , 3 Turn-On Delay Time2 , 3 --- 3 6 Rise Time2 , 3 VDD=30V , VGS=10V , RG=6 --- 5 10 Turn-Off Delay Time2 , 3 ID=0.2A --- 14 27 nC ns Tf Fall Time2 , 3 --- 9 17 Ciss Input Capacitance --- 25.5 38 Coss Output Capacitance --- 17 26 Crss Reverse Transfer Capacitance --- 7.8 12 Min. Typ. Max. Unit --- --- 0.3 A --- --- 1.2 A --- --- 1 V VDS=30V , VGS=0V , F=1MHz pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ trr Reverse Recovery Time VGS=50V, IS=1A , dI/dt=100A/µs --- 3.4 --- ns Qrr Reverse Recovery Charge TJ=25℃ --- 0.7 --- nC VG=VD=0V , Force Current Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.msksemi.com 2N7002K TC , Case Temperature (℃) Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Normalized Vth vs. TJ Square Wave Pulse Duration (s) Fig.5 Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 Fig.2 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 Compiance Normalized On Resistance () ID , Continuous Drain Current (A) Semiconductor Normalized Transient Impedance VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area www.msksemi.com 2N7002K Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N PKG QTY 2N7002K SOT-23 3000 www.msksemi.com 2N7002K Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com