ESDA6V8AV6

www.msksemi.com ESDA6V8AV6 Semiconductor Specification Features: zWorking Peak Reverse Voltage: 5 V zLow Leakage current: 20kV per HBM zIEC61000- 4- 2 Level 4 ESD Protection zIEC61000- 4- 4 Level 4 EFT Protection zFive separate unidirectional configurations SOTï563 1 6 2 5 3 4 Compiance Mechanical Characteristics zVoid Free, Transfer-Molded, Thermosetting Plastic Case zCorrosion Resistant Finish, Easily Solderable zSmall Packaging Applications zCell Phone Handsets and Accessories zPersonal Digital Assistants (PDA's) zNotebooks, Desktops, and Servers zPortable Instrumentation zDigital Cameras zPeripherals zMP3 Players Absolute Maximum Rating Rating Peak Pulse Power(tp=8/20us) Maximum Peak Pulse Current(tp=8/20us) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Maximum lead temperature for soldering during 10s Storage Temperature Range Operating Temperature Range Symbol Ppp Ipp Value 20 1.6 Units W A Vpp KV TL ±20 ±16 260 Tstg Top -55~+150 -55~+125 o C o C C o www.msksemi.com ESDA6V8AV6 Semiconductor Compiance Electrical Characteristics (T=25oC, Device for 5.0V Working Peak Reverse Voltage) Conditions Minimum Typical IR VRWM=5V VF IF= -10mA -0.4 -0.8 VBR IT=1mA 6.2 6.8 IPP=1A, tp = 8/20us, note1 VC IPP=1.6A, tp = 8/20us, note1 C Pin1 to 2 VR = 0V, f = 1MHz 9 Maximum 0.5 -1.25 7.2 12 14.4 Unit uA V V V V pF Note1: Surge current waveform per Figure 1. Electrical Parameter Symbol IPP VC VRWM IR IT VBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Forward Current Forward Voltage @ IF I IF VF VC VBR VRWM IR V IPP www.msksemi.com ESDA6V8AV6 Semiconductor Compiance Typical Characteristics Figure 2. Power Derating Curve Figure 1. Pulse Waveform 110 WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 PERCENT OF IPP 80 70 110 100 % of Rated Power or I PP 100 cït 60 td = IPP/2 50 40 30 90 80 70 60 50 40 30 20 20 10 0 0 10 5 10 15 20 25 0 30 0 25 Figure 3. Non-Repetitive Peak Pulse Power vs. Pulse Time 75 100 125 150 Figure 4. Junction Capacitance vs. Reverse Voltage 10 10 Capacitance - Cj (pF) Peak Pulse Power - P PP (kW) 50 Ambient Temperature - TA (oC) t, TIME (ms) 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (Ps) 100 1000 8 6 4 2 0 1 2 3 Reverse Voltage - VR (V) 4 5 www.msksemi.com ESDA6V8AV6 Semiconductor Compiance PACKAGE MECHANICAL DATA REEL SPECIFICATION P/N PKG QTY ESDA6V8AV6 SOT-563 3000 www.msksemi.com ESDA6V8AV6 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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