FDC5614P

www.msksemi.com FDC5614P Semiconductor SOT23-6 Pin Configuration Compiance Features  -60V,-3.3A, RDS(ON) = 70 mΩ@VGS = -10V  Improved dv/dt capability D D  D D  Fast switching  Green Device Available S Applications G  Motor Drive  Power Tools  LED Lighting D G BVDSS RDSON ID -60V 70m -3.3A S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM Parameter Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V Drain Current – Continuous (TA=25℃) -3.3 A Drain Current – Continuous (TA=70℃) -2.6 A Drain Current – Pulsed1 -13.2 A 2 W 0.016 W/℃ Power Dissipation (TA=25℃) PD Power Dissipation – Derate above 25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. Max. Unit --- 62.5 ℃/W www.msksemi.com FDC5614P Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol BVDSS Parameter Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Conditions Min. Typ. Max. VGS=0V , ID=-250uA -60 --- --- V VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 uA VGS=±20V , VDS=0V --- --- ±100 nA VGS=-10V , ID=-2A --- 70 105 m Unit On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-1A --- 80 130 m VGS(th) Gate Threshold Voltage VGS=VDS , ID=-250uA -1.0 -1.6 -2.5 V Forward Transconductance VDS=-10V , ID=-1A --- 3 --- S --- 10 --- 1.6 --- 3 --- 8 VDD=-30V , VGS=-10V , RG=6 --- 15.4 ID=-1A --- 42.8 Fall Time3 , 4 --- 8.4 Input Capacitance --- 720 gfs Dynamic and switching Characteristics Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Total Gate Charge3 , 4 Gate-Source Gate-Drain Charge3 , 4 VDS=-30V , VGS=-10V , ID=-1A Charge3 , 4 Turn-On Delay Time3 , 4 Rise Time3 , 4 Turn-Off Delay Time3 , 4 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=-30V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz nC ns pF --- 42 --- 32 --- 22 Min. Typ. Max. Unit --- --- -3.3 A --- --- -6.6 A  Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-50V, IS=-1A --- 30 --- ns Qrr Reverse Recovery Charge di/dt=100A/µs, TJ=25℃ --- 15 --- nC VG=VD=0V , Force Current Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-18A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. www.msksemi.com FDC5614P Semiconductor 2.5 VGS=-4.5V Normalized On Resistance -ID , Continuous Drain Current (A) 2 VGS=-2.7V 1.6 VGS=-2.5V 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2 1.5 1 0.5 0 2 -50 1.4 10 1.2 1 0.8 0.6 -50 0 50 100 150 50 100 150 Normalized RDSON vs. TJ ID=-1A VDS=-30V 8 6 4 2 0 0 2 4 6 8 10 Qg , Gate Charge (nC) TJ , Junction Temperature (℃) Fig.4 Fig.3 Normalized Vth vs. TJ Gate Charge Waveform 1000 3.5 Ciss 3 2.5 Capacitance (pF) -ID , Continuous Drain Current (A) 0 TJ , Junction Temperature (℃) Fig.2 -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage -VDS ,Drain to Source Voltage (V) Fig.1 Typical Output Characteristics 0.4 Compiance 2 1.5 1 0.5 0 25 Fig.5 50 75 100 125 150 TC , Case Temperature (℃) Continuous Drain Current vs. TC 100 Coss Crss 10 0.1 1 10 -VDS , Drain to Source Voltage (V) Fig.6 Capacitance Characteristics www.msksemi.com FDC5614P Normalized Thermal Response 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLEPULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Compiance 10 10us 1 100us 1ms 0.1 10ms 100ms DC 0.01 TC=25℃ 0.1 1 10 100 -VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.7 -ID , Continuous Drain Current (A) Semiconductor Normalized Transient Impedance Fig.8 Maximum Safe Operation Area VDS 90% 10% VGS Td(on) Tr Ton Fig.9 Td(off) Tf Toff Switching Time Waveform www.msksemi.com FDC5614P Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° REEL SPECIFICATION P/N FDC5614P PKG SOT-23-6 QTY 3000 www.msksemi.com FDC5614P Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com