GBLC08C-MS

www.msksemi.com GBLCXXC-MS Semiconductor Compiance Features  350W peak pulse power (8/20μs)  Ultra low capacitance ：1.0pF typical  Ultra low leakage：nA level  Low Operating：3.3V,5V,8V,12V,15V,24V  Low clamping voltage  Protects one power line or data line  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  RoHS Compliant Mechanical Characteristics        Package: SOD-323 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Circuit and Pin Schematic SOD-323 Applications     USB Ports Smart Phones Wireless Systems Ethernet 10/100/1000 Base T Absolute Maximum Ratings (T A=25°C unless otherwise specified) Parameter ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range Symbol VESD Value ±30 ±30 Unit kV TJ −40 to +85 °C Tstg −55 to +150 °C www.msksemi.com GBLCXXC-MS Semiconductor Compiance Electrical Characteristics (TA=25°C unless otherwise specified) GBLC03C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 3.3 V Test Condition V IT = 1mA 100 nA VRWM = 3.3V 4 Reverse Leakage Current IR Clamping Voltage VC 7 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 16 V IPP = 20A (8 x 20µs pulse) Peak Pulse Current IPP 20 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 GBLC05C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 5 V Test Condition V IT = 1mA 100 nA VRWM = 5V 6 Reverse Leakage Current IR Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 18 V IPP = 18A (8 x 20µs pulse) Peak Pulse Current IPP 18 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com GBLCXXC-MS Semiconductor Compiance GBLC08C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 8 V Test Condition V IT = 1mA 100 nA VRWM = 8V 8.5 Reverse Leakage Current IR Clamping Voltage VC 14 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 19 V IPP = 13A (8 x 20µs pulse) Peak Pulse Current IPP 13 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 GBLC12C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V Test Condition V IT = 1mA 100 nA VRWM = 12V 13.3 Reverse Leakage Current IR Clamping Voltage VC 19 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 25 V IPP = 10A (8 x 20µs pulse) Peak Pulse Current IPP 10 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com GBLCXXC-MS Semiconductor Compiance GBLC15C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 15 V Test Condition V IT = 1mA 100 nA VRWM = 15V 16.7 Reverse Leakage Current IR Clamping Voltage VC 20 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 31 V IPP = 8A (8 x 20µs pulse) Peak Pulse Current IPP 8 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 GBLC24C-MS Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 24 V Test Condition V IT = 1mA 100 nA VRWM = 24V 26.7 Reverse Leakage Current IR Clamping Voltage VC 40 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 71 V IPP = 3.5A (8 x 20µs pulse) Peak Pulse Current IPP 3.5 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com GBLCXXC-MS Semiconductor Compiance PACKAGE MECHANICAL DATA REEL SPECIFICATION P/N GBLCXXC-MS PKG SOD-323 QTY 3000 www.msksemi.com GBLCXXC-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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