MSESD08CI

www.msksemi.com MSESDxxCI Semiconductor Description Features MSESDxxCI a 3.3V ~24V bi-directional TVS diode， utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The MSESDxxCI has a low capacitance with a typical value at 1pF,and complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a lead-free SOD-323 package. The small size, low capacitance and high ESD surge protection make MSESDxxCI an ideal choice to protect cell phone, wireless systems, and communication equipment.  350W peak pulse power (8/20μs)  Ultra low capacitance ：1.0pF typical Mechanical Characteristics Applications            Package: SOD-323 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Compiance  Ultra low leakage：nA level     Low Operating：3.3V,5V,8V,12V,15V,24V Low clamping voltage Protects one power line or data line Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  RoHS Compliant USB Ports Smart Phones Wireless Systems Ethernet 10/100/1000 Base T Dimensions and Pin Configuration Circuit and Pin Schematic Ordering Information Part Number Packaging Reel Size MSESDxxCI 3000/Tape & Reel 7 inch www.msksemi.com MSESDxxCI Semiconductor Compiance Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol ESD per IEC 61000−4−2 (Air) Value ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range Unit kV ±30 TJ −40 to +85 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) MSESD03CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 3.3 V 4 Test Condition V IT = 1mA 100 nA VRWM = 3.3V Reverse Leakage Current IR Clamping Voltage VC 7 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 16 V IPP = 20A (8 x 20µs pulse) Peak Pulse Current IPP 20 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com MSESDxxCI Semiconductor Compiance MSESD05CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 5 V Test Condition V IT = 1mA 100 nA VRWM = 5V 6 Reverse Leakage Current IR Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 18 V IPP = 18A (8 x 20µs pulse) Peak Pulse Current IPP 18 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 MSESD08CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 8 V Test Condition V IT = 1mA 100 nA VRWM = 8V 8.5 Reverse Leakage Current IR Clamping Voltage VC 14 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 19 V IPP = 13A (8 x 20µs pulse) Peak Pulse Current IPP 13 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com MSESDxxCI Semiconductor Compiance MSESD12CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V Test Condition V IT = 1mA 100 nA VRWM = 12V 13.3 Reverse Leakage Current IR Clamping Voltage VC 19 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 25 V IPP = 10A (8 x 20µs pulse) Peak Pulse Current IPP 10 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 MSESD15CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 15 V Test Condition V IT = 1mA 100 nA VRWM = 15V 16.7 Reverse Leakage Current IR Clamping Voltage VC 20 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 31 V IPP = 8A (8 x 20µs pulse) Peak Pulse Current IPP 8 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com MSESDxxCI Semiconductor Compiance MSESD24CI Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 24 V Test Condition V IT = 1mA 100 nA VRWM = 24V 26.7 Reverse Leakage Current IR Clamping Voltage VC 40 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 71 V IPP = 3.5A (8 x 20µs pulse) Peak Pulse Current IPP 3.5 A tp=8/20µs Junction Capacitance CJ pF VR = 0V, f = 1MHz 1 1 www.msksemi.com MSESDxxCI Semiconductor Compiance SOD-323 Package Outline Drawing SYM A DIMENSIONS MILLIMETERS INCHES MIN MAX MIN MAX 1.50 1.80 0.060 0.071 B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 www.msksemi.com MSESDxxCI Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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