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ESD9L5.0ST5G-MS
Semiconductor
Compiance
Features
Small Body Outline Dimensions:
0.039″x 0.024″(1.0 mm x 0.60 mm)
Protects one I/O or power line
Low Clamping Voltage
Ultra Low Capacitance:0.9pF
Working Voltage: 5 V
Low Leakage Current
Response Time is Typically < 1 ns
SOD-882
IEC COMPATIBILITY (EN61000-4)
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Applications
DFN1006
Laptop Computers
Molding compound flammability rating:
Cellular Phones
UL 94V-0
Digital Cameras
Marking: Marking Code
Personal Digital Assistants (PDAs)
Packaging: Tape and Reel per EIA 481
RoHS/WEEE Compliant
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
P/N
ESD9L5.0ST5G-MS
C (pF)
VC (V)
@ IPP = 1 A
(Note 3)
VC
mA
Max
Max
Per IEC61000−4−2
(Note 4)
1.0
0.9
12.9
VRWM
(V)
IR (µA)
@ VRWM
VBR (V) @ IT
(Note 2)
IT
Max
Max
Min
5.0
1.0
5.4
Figures 1 and 2
See Below
2. VBR is measured with a pulse test current IT at an ambient temperature of 25C.
3. Surge current waveform per Figure 4.
4. For test procedure see Figures 3.
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ESD9L5.0ST5G-MS
Semiconductor
Compiance
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
IPP
IT
VC VBR VRWM IR
IR VRWM VBR VC
IT
V
IPP
Bi−Directional TVS
Capacitance @ VR = 0 and f = 1.0 MHz
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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ESD9L5.0ST5G-MS
Semiconductor
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
Compiance
IEC61000−4−2 Waveform
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
% OF PEAK PULSE CURRENT
100
tr
90
PEAK VALUE IRSM @ 8 µs
PULSEWIDTH(tP) ISDEFINED
ASTHATPOINT WHERETHE
PEAK CURRENT DECAY= 8 µs
80
70
60
HALF VALUE IRSM /2 @ 20 µs
50
40
30
tP
20
10
0
0
20
40
t, TIME (µs)
60
80
Figure 4. 8 X 20 µs Pulse Waveform
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ESD9L5.0ST5G-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Symbol
A
A1
D
E
D1
E1
b
e
e1
L1
L2
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.010
0.090
0.950
1.050
0.550
0.650
0.390REF.
0.400
0.500
0.420REF.
0.580
0.680
0.360REF.
0.050REF.
0.270
0.370
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.037
0.041
0.022
0.026
0.015REF.
0.016
0.020
0.017REF.
0.023
0.027
0.014REF.
0.002REF.
0.011
0.015
REEL SPECIFICATION
P/N
ESD9L5.0ST5G-MS
PKG
QTY
SOD-882
10000
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ESD9L5.0ST5G-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
A
Dim
B
C
R
D
E
MIN
Millimeters
MAX
MIN
MAX
A
0.0125
0.02
0.32
0.52
B
0.000
0.002
0.00
0.05
C
0.037
0.043
0.95
1.080
D
0.022
0.027
0.55
0.680
E
0.016
0.024
0.40
0.60
F
0.008
0.012
0.20
0.30
H
R
F
Inches
0.015Typ.
0.001
0.40Typ.
0.005
0.05
0.15
H
1.20
0.50
0.60
0.70
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
REEL SPECIFICATION
P/N
ESD9L5.0ST5G-MS
PKG
SOD-882
QTY
10000
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ESD9L5.0ST5G-MS
Semiconductor
Compiance
Attention
■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative
nearest
you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities
concerned
in
accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or
other rightsof third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the
MSKSEMI Semiconductor productthat you intend to use.
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