RCLAMP0521P.TCT

www.msksemi.com RCLAMP0521P.TCT Semiconductor Compiance Features PIN CONFIGURATION ■ 100Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.25pF typ. IO to IO) ■ Protection one data/power line to: ■ IEC 61000-4-2 ±20kV contact ±20kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 4A (8/20μs) Applications 0402 ■ Cell Phone Handsets and Accessories ■ Microprocessor based equipment ■ Personal Digital Assistants (PDA’s) ■ Notebooks, Desktops, and Servers ■ Portable Instrumentation Mechanical Data ■ 0402 ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT IR I IT R VRWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulse waveform. www.msksemi.com RCLAMP0521P.TCT Semiconductor Compiance Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 100 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 4.0 A VESD 20 20 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Electrical Characteristics Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC IPP=4A,tp=8/20μs Junction Capacitance Cj IO to IO VR = 0V, f = 1MHz Max Units 5.0 V 6.0 V 0.25 100 nA 4.0 A 25 V 0.4 pF www.msksemi.com RCLAMP0521P.TCT Semiconductor Typical Characteristics Figure 2: Power Derating Curve 110 10 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 100w 8/20µswaveform 0.1 0.01 0.1 1 10 90 80 70 60 50 40 30 20 10 0 1,000 100 100 0 25 td – Pulse Duration - µs 80 Ipp 125 150 26 Clamping Voltage–VC (V) 90 Percent 100 20 Waveform Paramters tr=8µs td=20µs 100 70 e 75 Figure 4: Clamping Voltage vs.Ipp 110 60 50 Ambient Temperature - TA (℃) Figure3: Pulse Waveform -1 50 40 30 td=Ipp/2 20 23 20 17 Test Waveform Paramters tr=8µs td=20µs 14 11 8 5 10 0 2 0 5 10 15 20 25 30 0 Time (µs) IPP (A) Compiance 1 2 3 4 5 6 Peak Pulse Current–IPP (A) Figure5: Positive Clamping voltage (TLP) Figure5: Negative Clamping voltage (TLP) 35 0 30 5 25 10 20 IPP (A) 15 Rdyn = 0.55 Ω 20 15 Rdyn = 0.55 Ω 10 25 5 30 0 -0.5 35 4.5 9.5 14.5 19.5 24.5 VCL (V) -24.5 -19.5 -14.5 -9.5 -4.5 0.5 VCL (V) www.msksemi.com RCLAMP0521P.TCT Semiconductor Compiance PACKAGE MECHANICAL DATA A Dim B C R E D Millimeters MIN MAX MIN MAX A 0.0125 0.02 0.32 0.52 B 0.000 0.002 0.00 0.05 C 0.037 0.043 0.95 1.080 D 0.022 0.027 0.55 0.680 E 0.016 0.024 0.40 0.60 F 0.008 0.012 0.20 0.30 H R F Inches 0.015Typ. 0.001 0.40Typ. 0.005 0.05 0.15 H 1.20 0.50 0.60 0.70 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. REEL SPECIFICATION P/N RCLAMP0521P.TCT PKG QTY 0402 10000 www.msksemi.com RCLAMP0521P.TCT Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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